STMICROELECTRONICS STS3DNE60L

STS3DNE60L
®
N - CHANNEL 60V - 0.065Ω - 3A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STS3DNE60L
■
■
■
V DSS
R DS(on)
ID
60 V
< 0.08 Ω
3A
TYPICAL RDS(on) = 0.065 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
ID
IDM (•)
P tot
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 20
V
3
A
1.9
A
12
A
2
1.6
W
W
Gate-source Voltage
o
Drain Current (continuous) at Tc = 25 C
Single Operation
Drain Current (continuous) at T c = 100 o C
Single Operation
Drain Current (pulsed)
o
Total Dissipation at T c = 25 C Dual Operation
Total Dissipation at T c = 25 o C Sinlge Operation
(•) Pulse width limited by safe operating area
May 1999
1/5
STS3DNE60L
THERMAL DATA
R thj-amb
Tj
Tstg
o
78
62.5
175
-55 to 150
*Thermal Resistance Junction-ambient
Single Operation
Dual Operation
Maximum Operating Junction Temperature
Storage Temperature
o
C/W
C/W
o
C
o
C
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
60
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 10 V
V GS = 4.5 V
Min.
1
I D = 1.5 A
I D = 1.5 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Typ.
1.7
2.5
V
0.065
0.08
0.08
0.1
Ω
Ω
3
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 1.5 A
V GS = 0 V
Min.
Typ.
Max.
Unit
5
S
815
125
40
pF
pF
pF
STS3DNE60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Delay Time
Rise Time
V DD = 30 V
I D = 10 A
V GS = 5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V I D = 3 A V GS = 4.5 V
Min.
Typ.
Max.
20
45
Unit
ns
ns
13.5
8
3.5
18
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
t d(of f)
tf
Turn-off Delay Time
Fall Time
V DD = 30 V
I D = 10 A
V GS = 5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
40
10
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V clamp = 48 V
I D = 20 A
V GS = 5 V
R G = 4.7 Ω
(Inductive Load, see fig. 5)
10
25
42
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 3 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 20 A
di/dt = 100 A/µs
V DD = 30 V
T j = 150 o C
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
3
12
A
A
1.2
V
65
ns
130
nC
4
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STS3DNE60L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
5.0
0.188
0.196
6.2
0.228
c1
45 (typ.)
D
4.8
E
5.8
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
4/5
STS3DNE60L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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