NEC UPG2134TB-E3

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2134TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application.
This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
super minimold package. And this package is able to high-density surface mounting.
FEATURES
• Operation frequency
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)
• Supply voltage
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)
• Circuit current
: IDD = 28 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm
: VDD2 = 2.7 to 4.2 V (3.5 V TYP.)
• Power gain
: GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm
• Gain control range
: GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V,
• Low distortion
: Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +10 dBm,
Pin = −15 dBm
f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Digital Cellular: PDC 1.5 GHz etc.
ORDERING INFORMATION
Part Number
µPG2134TB-E3
Package
6-pin super minimold
Marking
G3B
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2134TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10194EJ01V0DS (1st edition)
Date Published October 2002 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2002
µPG2134TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
G3B
3
2
1
(Top View)
(Bottom View)
4
3
4
4
3
5
2
5
5
2
6
1
6
6
1
Pin No.
Pin Name
1
VDD1
2
GND
3
OUTPUT/VDD2
4
VAGC
5
GND
6
INPUT
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified)
Parameter
Supply Voltage1, 2
Gain Control Voltage
Input Power
Symbol
Ratings
Unit
VDD1, 2
6.0
V
VAGC
6.0
V
Pin
−8
dBm
140
Note
Power Dissipation
PD
mW
Operating Ambient Temperature
TA
−30 to +90
°C
Storage Temperature
Tstg
−35 to +150
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
fopt
1 429
1 441
1 453
MHz
Supply Voltage1
VDD1
2.7
3.0
3.3
V
Supply Voltage2
VDD2
2.7
3.5
4.2
V
Gain Control Voltage
VAGC
0
−
2.5
V
Pin
−
−15
−10
dBm
Operating Frequency
Input Power
2
Data Sheet PG10194EJ01V0DS
µPG2134TB
ELECTRICAL CHARACTERISTICS
(TA = +25°°C, VDD1 = 3.0 V, VDD2 = 3.5 V, π/4DQPSK modulated signal input, with external input and
output matching, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
1 429
1 441
1 453
MHz
Operating Frequency
fopt
Circuit Current
IDD
Pin = −15 dBm, VAGC = 2.5 V
−
28
35
mA
Power Gain
GP
Pin = −15 dBm, VAGC = 2.5 V
26
28
−
dB
Adjacent Channel Power Leakage 1
Padj1
Pout = +10 dBm, VAGC = 2.5 V,
∆f = ±50 kHz, 21 kHz Bandwidth
−
−60
−55
dBc
Adjacent Channel Power Leakage 2
Padj2
Pout = +10 dBm, VAGC = 2.5 V,
∆f = ±100 kHz, 21 kHz Bandwidth
−
−70
−65
dBc
Gain Control Range
GCR
Pin = −15 dBm, VAGC = 0.5 to 2.5 V
37
42
−
dB
Gain Control Current
IAGC
VAGC = 0.5 to 2.5 V
−
1
20
µA
Data Sheet PG10194EJ01V0DS
3
µPG2134TB
EVALUATION CIRCUIT
f = 1 441 MHz, VDD1 = 3.0 V, VDD2 = 3.5 V
OUTPUT
3 pF
1 nH
10 000 pF
1 kΩ
3
VDD2
4
VAGC
1 000 pF
2 pF
2
5
2.2 nH
8.2 nH
1
VDD1
6
INPUT
100 pF
1 000 pF
6.8 nH
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10194EJ01V0DS
µPG2134TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C6
Vdd2
C3
Vdd1
C
2
C1
L1
L2
C
5
OUT
IN
C4
L4
L3
Vagc
R1
AGC AMP
USING THE NEC EVALUATION BOARD
Symbol
Values
Part Number
Maker
1 000 pF
GRM39CH102J25PB
muRata
C2
3 pF
GRM39CH030C50PB
muRata
C4
2 pF
GRM39CH020C50PB
muRata
C5
100 pF
GRM39CH101J50PB
muRata
C6
10 000 pF
GRM39CH103J25PB
muRata
L1
2.2 nH
TFL0816-2N7
Susumu
L2
1.0 nH
TFL0816-1N0
Susumu
L3
6.8 nH
TFL0816-6N8
Susumu
L4
8.2 nH
TFL0816-8N2
Susumu
R1
1 kΩ
RR0816P-102-D
Susumu
C1, C3
Data Sheet PG10194EJ01V0DS
5
µPG2134TB
OUTPUT POWER, CIRCUIT CURRENT,
ADJACENT CHANNEL POWER LEAKAGE
vs. INPUT POWER
+15
+10
0
–10
–20
+20
+15
–30
Pout
+10
–40
Padj1
+5
–50
0
–60
–25
–20
–15
–10
–5
0
–70
Output Power Pout (dBm)
f = 1 441 MHz,
+35 VDD1 = 3.0 V, VDD2 = 3.5 V,
VAGC = 2.5 V
+30
IDD
+25
–5
–30
OUTPUT POWER vs. GAIN CONTROL VOLTAGE
+20
+40
Adjacent Channel Power Leakage 1
[email protected] ∆ f = ±50 kHz (dBc)
Output Power Pout (dBm), Circuit Current IDD (mA)
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
f = 1 441 MHz,
+10 VDD1 = 3.0 V, VDD2 = 3.5 V,
Pin = –15 dBm
+5
0
–5
–10
–15
–20
–25
–30
–35
0
Input Power Pin (dBm)
1.0
1.5
2.0
2.5
Gain Control Voltage VAGC (V)
Remark The graphs indicate nominal characteristics.
6
0.5
Data Sheet PG10194EJ01V0DS
3.0
µPG2134TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet PG10194EJ01V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
7
µPG2134TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet PG10194EJ01V0DS
µPG2134TB
• The information in this document is current as of October 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4 - 0110
Data Sheet PG10194EJ01V0DS
9