FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.1mΩ Features Applications Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters Qualified to AEC Q101 AD FREE I M ENTATIO LE N MP LE RoHS Compliant ©2010 Fairchild Semiconductor Corporation FDB8832_F085 Rev. A1 1 www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET May 2010 Ratings 30 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 165oC, VGS = 10V) 80 Symbol Drain to Source Voltage VDSS VGS Parameter Drain Current Continuous (TC < 163oC, VGS = 5V) ID 80 Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed See Figure 4 Single Pulse Avalanche Energy EAS PD A 34 (Note 1) 1246 mJ Power Dissipation 300 W Derate above 25oC 2 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient, lin2 copper pad area (Note 2) 0.5 o 62 oC/W 43 oC/W C/W Package Marking and Ordering Information Device Marking Device Package Reel Size FDB8832 FDB8832_F085 TO-263AB 330mm Tape Width Quantity 24mm 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V TJ = 150°C 30 - - - - 1 - - 250 - - ±100 nA V µA On Characteristics VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA ID = 80A, VGS = 10V rDS(on) Drain to Source On Resistance 1.0 1.6 3.0 - 1.4 1.9 ID = 80A, VGS = 5V - 1.5 2.1 ID = 80A, VGS = 4.5V - 1.6 2.2 ID = 80A, VGS = 10V TJ = 175°C - 2.3 3.0 VDS = 15V, VGS = 0V, f = 1MHz - 11400 - pF - 2140 - pF - 1260 - pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.2 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 204 265 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qg(TH) Threshold Gate Charge VGS = 0 to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDB8832_F085 Rev. A1 2 VDD = 15V ID = 80A Ig = 1.0mA - 100 130 nC - 10.9 14.2 nC - 33 - nC - 22 - nC - 43 - nC www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 155 ns td(on) Turn-On Delay Time - 24 - ns tr Turn-On Rise Time - 73 - ns td(off) Turn-Off Delay Time - 54 - ns tf Turn-Off Fall Time - 38 - ns toff Turn-Off Time - - 149 ns ISD = 75A - 0.8 1.25 V ISD = 40A - 0.8 1.0 V VDD = 15V, ID = 80A VGS = 5V, RGS = 1.5Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 59 77 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 67 87 nC Notes: 1: Starting TJ = 25oC, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8832_F085 Rev. A1 3 www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 350 1.0 300 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 250 VGS = 10V 200 VGS = 5V 150 100 50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC CURRENT LIMITED BY PACKAGE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 10000 VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8832_F085 Rev. A1 4 www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 4000 10us 1000 100us 100 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 60 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area VDD = 5V 150 TJ = 175oC 100 TJ = 25oC TJ = -55oC 50 0 200 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 Figure 6. Unclamped Inductive Switching Capability VGS = 3V 100 50 0 0.0 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 1 2 3 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 3.5V VGS, GATE TO SOURCE VOLTAGE (V) 0 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3 TJ = 175oC 2 TJ = 25oC 1 0 150 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8832_F085 Rev. A1 1.5 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.0 0.8 0.6 0.4 0.2 0.0 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 10000 Coss Crss f = 1MHz VGS = 0V 50 Figure 13. Capacitance vs Drain to Source Voltage FDB8832_F085 Rev. A1 0.95 0.90 -80 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250µA 10 ID = 80A 8 VDD = 12V 6 VDD = 15V VDD = 18V 4 2 0 0 50 150 200 100 Qg, GATE CHARGE(nC) 250 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8832_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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