NEC 2SK3361

PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3361
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3361 is N-Channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SK3361
Isolated TO-220
designed for high current switching application.
FEATURES
• Low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A)
(Isolated TO-220)
RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
★
• Low Ciss: Ciss = 4900 pF TYP.
• Built-in gate protection diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, –10
V
ID(DC)
±40
A
ID(pulse)
±160
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Drain Current (DC)
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
40
A
Single Avalanche Energy
Note2
EAS
160
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
3.57
°C/W
Channel to Ambient
Rth(ch-A)
62.5
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14319EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1999
2SK3361
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 20 A
14
20
mΩ
RDS(on)2
VGS = 4.5 V, ID = 20 A
19
28
mΩ
VGS(off)
VDS = 10 V, ID = 250 µA
1.5
2.0
2.5
V
18
36
★
Gate to Source Cut-off Voltage
★
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 20 A
Drain Leakage Current
IDSS
VDS = 100 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
4900
pF
Output Capacitance
Coss
VGS = 0 V
990
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
580
pF
Turn-on Delay Time
td(on)
ID = 20 A
44
ns
VGS(on) = 10 V
230
ns
td(off)
VDD = 50 V
360
ns
tf
RG = 10 Ω
250
ns
Total Gate Charge
QG
ID = 40 A
130
nC
Gate to Source Charge
QGS
VDD = 80 V
14
nC
Gate to Drain Charge
QGD
VGS(on) = 10 V
50
nC
★
Rise Time
tr
Turn-off Delay Time
Fall Time
★
★
Body Diode Forward Voltage
S
VF(S-D)
IF = 40 A, VGS = 0 V
0.92
V
Reverse Recovery Time
trr
IF = 40 A, VGS = 0 V
170
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
870
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = 20 → 0 V
RG
PG.
VGS
VGS
Wave Form
0
90 %
ID
VGS
0
ID
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1 %
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
2
IG = 2 mA
RL
50 Ω
VDD
10 %
0 10 %
Wave Form
τ
VDD
PG.
90 %
BVDSS
VDS
ID
90 %
VDD
ID
IAS
VGS(on)
10 %
Preliminary Data Sheet D14319EJ1V0DS00
tr td(off)
td(on)
ton
tf
toff
2SK3361
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0 ± 0.3
φ 3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
12.0 ± 0.2
Drain (D)
Gate (G)
13.5MIN.
4 ± 0.2
3 ± 0.1
15.0 ± 0.3
EQUIVALENT CIRCUIT
1.3 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54
0.7 ± 0.1
2.54
Body
Diode
Gate
Protection
Diode
Source (S)
1.Gate
2.Drain
3.Source
1 2 3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14319EJ1V0DS00
3
2SK3361
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confirm that this is the latest version.
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M7 98. 8