SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ✪ ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BST62-70 C 627 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -85 V Collector-Emitter Voltage V CEO -72 V Emitter-Base Voltage V EBO -10 V Pea Pulse Current I CM -1.5 A Continuous Collector Current IC -500 mA Base Current IB -100 mA Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -85 MAX. V I C=-10µA, I E=0 Collector-Emitter Breakdown Voltage V (BR)CEO -72 V I C=-10mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -10 V I E=-10µA, I C=0 Emitter Cut-Off Current I EBO -10 µA V EB=-8V, I E=0 Collector-Emitter Cut-Off Current I CES -10 µA V CE=-72V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) -1.3 -1.3 V V I C=-500mA, I B=-0.5mA I C=-500mA, I B=-0.5mA T j=150°C Base-Emitter Saturation Voltage V BE(sat) -1.9 V I C=-500mA, I B=-0.5mA Static Forward Current Transfer Ratio h FE 1K 2K I C=-150mA, V CE=-10V* I C=-500mA, V CE=-10V* Turn On Time t on 400 Typical ns Turn Off Time t off 1.5K Typical ns I C=-500mA I Bon=I Boff=-0.5mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZTA63 (SOT223) datasheet. 3 - 82