BC881 TRANSISTOR (NPN) BC818-16 BC818-25 BC818-40 SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage z z z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 30 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 10μA, IC=0 5 V Collector cut-off current ICBO VCB= 25 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 300mA 60 DC current gain 630 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V Base-emitter voltage VBE VCE=1V, IC= 500mA Collecter capactiance Cob VCB=10V ,f=1MHz fT Transition frequency CLASSIFICATION OF Rank Range Marking VCE= 5 V, f=100MHz IC= 50mA 6 pF 170 MHz hFE (1) BC818-16 BC818-25 BC818-40 100-250 160-400 250-630 6E 6F 6G １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC881 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５