Inchange Semiconductor Product Specification 2SD1409 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・DARLINGTON APPLICATIONS ・Igniter applications ・High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector power dissipation TC=25℃ 25 W Ta=25℃ 2.0 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1409 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 400 UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.04A 2.5 V VECF Emitter-collector diode forward voltage IE=4A; IB=0 3.0 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 COB Collector output capacitance f=1MHz ; VCB=50V;IE=0 35 pF 1 μs 8 μs 5 μs Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=0.04A VCC=100V ,RL=25Ω Fall time 2 Inchange Semiconductor Product Specification 2SD1409 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.15 mm) 3