isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJH13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)—MJH13090 = 450V(Min)—MJH13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE MJH13090 650 MJH13091 750 MJH13090 400 MJH13091 450 UNIT V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5 A IBM Base Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJH13090/13091 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MJH13090 MIN TYP. MAX UNIT 400 IC=100mA ; IB=0 V 450 MJH13091 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC=100℃ 1.0 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 3.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC=100℃ 1.5 1.5 V MJH13090 VCEV=650V;VBE(off)=1.5V VCEV=650V;VBE(off)=1.5V;TC=100℃ 0.5 2.5 MJH13091 VCEV=750V;VBE(off)=1.5V VCEV=750V;VBE(off)=1.5V;TC=100℃ 0.5 2.5 MJH13090 VCE= 650V; RBE= 50Ω,TC= 100℃ 3.0 MJH13091 VCE= 750V; RBE= 50Ω,TC= 100℃ 3.0 1.0 mA 350 pF 30 50 ns 130 500 ns 550 2500 ns 100 500 ns VBE(sat) ICEV ICER Collector Cutoff Current Collector Cutoff Current mA mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 10A ; VCE= 3V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 8 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 10A , VCC= 250V; IB1= 1.25A;tp= 30μs; VBE(off)= 5V Duty Cycle≤2.0% 2