Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complementary to BTN5551A3. Symbol Outline BTP5401A3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTP5401A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -160 -150 -5 -0.6 625 200 150 -55~+150 V V V A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 fT Cob Min. -160 -150 -5 50 56 50 100 - Typ. - Max. -50 -50 -0.2 -0.5 -1 -1 390 300 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-120V VEB=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank K P Q R Range 56~120 82~180 120~270 180~390 BTP5401A3 CYStek Product Specification Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 HFE@VCE=5V Saturation Voltage---(mV) Current Gain---HFE 1000 100 10 VCE(SAT)@IC=10IB 100 10 0.1 1 10 100 0.1 1 10 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 100 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 0.1 100 0.1 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTP5401A3 CYStek Product Specification Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension α2 A Marking: B 1 2 3 N5401 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP5401A3 CYStek Product Specification