CYSTEKEC BTP5401A3

Spec. No. : C307A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTP5401A3
Description
• The BTP5401A3 is designed for general purpose amplification.
• Large IC , IC( Max) = -0.6A
• High BVCEO, BVCEO= -150V
• Complementary to BTN5551A3.
Symbol
Outline
BTP5401A3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTP5401A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-160
-150
-5
-0.6
625
200
150
-55~+150
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
hFE 1
hFE 2
hFE 3
fT
Cob
Min.
-160
-150
-5
50
56
50
100
-
Typ.
-
Max.
-50
-50
-0.2
-0.5
-1
-1
390
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
K
P
Q
R
Range
56~120
82~180
120~270
180~390
BTP5401A3
CYStek Product Specification
Spec. No. : C307A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
[email protected]=5V
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
10
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
0.1
1
10
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
100
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=12V
0.1
100
0.1
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTP5401A3
CYStek Product Specification
Spec. No. : C307A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
TO-92 Dimension
α2
A
Marking:
B
1
2
3
N5401
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP5401A3
CYStek Product Specification