isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX14 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -55V(Min.) APPLICATIONS ·Designed for general purpose switching and amplifier applications. s c s .i -55 n c . i m e -7 V ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 100Ω VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE ww w -90 -60 UNIT V V V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 6.0 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX14 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -4V -1.7 V ICEX Collector Cutoff Current VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ -1.0 -5.0 mA hFE DC Current Gain fT CONDITIONS B n c . i m e s c s i . w Current Gain-Bandwidth Product w w isc Website：www.iscsemi.cn MIN IC= -0.5A; VCE= -4V 25 IC= -0.2A; VCE= -10V 4 2 MAX UNIT 100 MHz