STT08L01 Gre r Pro S a mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m ) Max Rugged and reliable. 225 @ VGS=10V 100V Surface Mount Package. 2.5A 360 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V TA=25°C 2.5 A TA=70°C 2.0 A 10 A 12 mJ TA=25°C 3 W TA=70°C 1.9 W -55 to 150 °C 12 42 °C/W °C/W Drain Current-Continuous -Pulsed a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Jul,27,2011 1 www.samhop.com.tw STT08L01 Ver 1.2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Typ Max V 1 ±100 1 Units uA nA 1.9 2.5 V VGS=10V , ID=1.25A 180 225 m ohm VGS=4.5V , ID=1A 265 360 m ohm VDS=20V , ID=1.25A 2.3 S VDS=25V,VGS=0V f=1.0MHz 312 35 22 pF pF pF 9.1 ns 10 14.8 ns ns 3.7 ns VDS=50V,ID=1.25A,VGS=10V 5.7 nC VDS=50V,ID=1.25A,VGS=4.5V 3.2 nC VDS=50V,ID=1.25A, VGS=10V 1.1 nC 1.8 nC c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=50V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=1A 0.8 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Jul,27,2011 2 www.samhop.com.tw STT08L01 Ver 1.2 10 10 8 ID, Drain Current(A) ID, Drain Current(A) VGS=10V VGS=6V VGS=5V 6 4 VGS=4V 2 8 6 Tj=125 C 4 2 25 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 4 6 5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3.0 R DS(on), On-Resistance Normalized V G S =10V RDS(on)(m Ω) 3 V GS, Gate-to-Source Voltage(V) 250 200 150 100 V G S =10V I D =1.25A 2.6 2.2 1.8 1.4 V G S =4.5V I D =1A 1.0 50 2 1 4 6 8 0 10 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 2 V DS, Drain-to-Source Voltage(V) 300 1 1 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,27,2011 3 www.samhop.com.tw STT08L01 Ver 1.2 20.0 600 Is, Source-drain current(A) I D =1.25A 500 RDS(on)(m Ω) 400 125 C 300 200 25 C 75 C 100 0 2 4 6 8 25 C 75 C 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 350 C, Capacitance(pF) 125 C 10 420 280 210 140 Coss 70 Crss 10 VDS=50V ID=1.25A 8 6 4 2 0 0 5 10 15 20 25 30 0 1 2 4 3 5 7 6 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 8 100 300 TD(off ) 10 I D, Drain Current(A) 100 Switching Time(ns) 5.0 1.0 0 0 10.0 Tr TD(on) Tf 10 RD 1 0.1 VDS=50V,ID=1A VGS=10V 0.01 0.1 1 1 10 100 ON S( )L im it 10 10 0m 1m s ms s 1s 10 s DC VGS=10V Single Pulse TA=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,27,2011 4 www.samhop.com.tw STT08L01 Ver 1.2 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 0.01 t1 t2 Single Pulse 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 14. Normalized Thermal Transient Impedance Curve Jul,27,2011 5 www.samhop.com.tw STT08L01 Ver 1.2 D B SOT-223 C 0.10 M C B C C 0.080 A C1 (C) E b1 E1 0.10 M C B b SECTION B-B DETAIL "A" g 1 3 2 B C1 B e b 0.10 M C B (C) C e1 b3 b2 SECTION C-C GAUGE PLANE A2 SEATING PLANE L 0.25 DETAIL "A" A C A1 COMMON SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MIN. 1.80 0.02 0.10 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.30 7.00 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 10 ° 0° DIMENSIONS INCHE MIN. MOM. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0630 0.0300 0.0280 0.1181 0.1161 0.0090 0.0090 0.2480 0.2638 0.1300 0.0319 0° 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 10 ° Jul,27,2011 6 www.samhop.com.tw STT08L01 Ver 1.2 SOT-223 Tape and Reel Data SOT-223 Carrier Tape D1 P0 P2 P1 E1 E2 E D0 T K0 B0 A0 unit:р PACKAGE A0 B0 7.42 ²0.1 6.83 ²0.1 K0 D0 1.88 ²0.1 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 E2 P0 P1 P2 T 1.75 ²0.1 5.50 ²0.5 8.0 ²0.1 4.00 ²0.1 2.00 ²0.05 0.292 ²0.02 SOT-223 Reel UNIT:р REEL SIZE ӿ330 ² 0.5 M N ӿ97.0 ² 1.0 W 2.2 W1 H 13.0 + 1.5 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jul,27,2011 7 www.samhop.com.tw