ADPOW APTGT200U170D4

APTGT200U170D4
Single switch
VCES = 1700V
IC = 200A @ Tc = 80°C
®
Trench IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
5
2
2
1
4
5
3
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1700
280
200
400
±20
1250
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
January, 2004
3
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT200U170D4 – Rev 0
1
APTGT200U170D4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 5.6Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 5.6Ω
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
IF = 200A
VGE = 0V
IF = 200A
VR = 900V
di/dt =990A/µs
IF = 200A
VR = 900V
di/dt =990A/µs
Min
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
2.0
2.4
5.8
Typ
17.6
0.6
200
100
750
20
2.4
6.4
2000
V
nA
Max
Unit
nF
ns
100
ns
850
115
Tj = 125°C
64
Tj = 25°C
76
Tj = 125°C
120
Min
IGBT
Diode
Typ
mJ
Max
2.2
-40
-40
-40
3
1
Unit
V
mJ
µC
Max
0.1
0.18
2500
APT website – http://www.advancedpower.com
V
230
Tj = 25°C
Tj = 125°C
Tj = 25°C
M6
M4
Unit
V
mA
90
Typ
1.8
1.9
36
Symbol Characteristic
TJ
TSTG
TC
5.2
Min
Thermal and package characteristics
VISOL
Max
88
Symbol Characteristic
VF
Typ
1700
Turn Off Energy
Reverse diode ratings and characteristics
RthJC
Min
Unit
°C/W
V
150
125
125
5
2
420
January, 2004
VCE(on)
Test Conditions
VGE = 0V, IC = 10mA
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 10mA
VGE = 20V, VCE = 0V
°C
N.m
g
2-3
APTGT200U170D4 – Rev 0
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
APTGT200U170D4
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGT200U170D4 – Rev 0
January, 2004
Package outline