APTGT200U170D4 Single switch VCES = 1700V IC = 200A @ Tc = 80°C ® Trench IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 5 2 2 1 4 5 3 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 280 200 400 ±20 1250 Tj = 125°C 1600A@1700V TC = 25°C TC = 80°C TC = 25°C Unit V January, 2004 3 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT200U170D4 – Rev 0 1 APTGT200U170D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 5.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 5.6Ω Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V IF = 200A VR = 900V di/dt =990A/µs IF = 200A VR = 900V di/dt =990A/µs Min Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight 2.0 2.4 5.8 Typ 17.6 0.6 200 100 750 20 2.4 6.4 2000 V nA Max Unit nF ns 100 ns 850 115 Tj = 125°C 64 Tj = 25°C 76 Tj = 125°C 120 Min IGBT Diode Typ mJ Max 2.2 -40 -40 -40 3 1 Unit V mJ µC Max 0.1 0.18 2500 APT website – http://www.advancedpower.com V 230 Tj = 25°C Tj = 125°C Tj = 25°C M6 M4 Unit V mA 90 Typ 1.8 1.9 36 Symbol Characteristic TJ TSTG TC 5.2 Min Thermal and package characteristics VISOL Max 88 Symbol Characteristic VF Typ 1700 Turn Off Energy Reverse diode ratings and characteristics RthJC Min Unit °C/W V 150 125 125 5 2 420 January, 2004 VCE(on) Test Conditions VGE = 0V, IC = 10mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 10mA VGE = 20V, VCE = 0V °C N.m g 2-3 APTGT200U170D4 – Rev 0 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current APTGT200U170D4 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT200U170D4 – Rev 0 January, 2004 Package outline