ADPOW APTGT25DA120D1

APTGT25DA120D1
Boost chopper
VCES = 1200V
IC = 25A @ Tc = 80°C
®
Trench IGBT Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
3
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M5 power connectors
• High level of integration
6
7
3
2
2
1
4
5
7
6
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1200
40
25
65
±20
140
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
January, 2004
Q2
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT25DA120D1 – Rev 0
1
APTGT25DA120D1
All ratings @ Tj = 25°C unless otherwise specified
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
VF
Diode Forward Voltage
Erec
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V, IC = 4mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 36Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 36Ω
Test Conditions
IF = 25A
VGE = 0V
IF = 25A
VR = 600V
di/dt =990A/µs
IF = 25A
VR = 600V
di/dt =990A/µs
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
For terminals
Mounting torque
To Heatsink
Package Weight
Typ
1.7
2.0
5.8
Typ
1.8
0.1
0.08
150
90
550
Max
5
2.1
6.5
400
V
nA
Max
Unit
nF
ns
100
ns
650
180
Typ
1.6
1.6
Tj = 125°C
2
Tj = 25°C
2.7
Tj = 125°C
5
Min
IGBT
Diode
Typ
Max
2.1
-40
-40
-40
2
3
Unit
V
mJ
µC
Max
0.9
1.5
2500
APT website – http://www.advancedpower.com
V
180
Min
M5
M6
Unit
V
mA
130
Tj = 25°C
Tj = 125°C
Symbol Characteristic
VISOL
5.0
Min
Thermal and package characteristics
RthJC
Min
1200
Unit
°C/W
January, 2004
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
V
150
125
125
3.5
5
180
°C
N.m
g
2-3
APTGT25DA120D1 – Rev 0
Electrical Characteristics
APTGT25DA120D1
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGT25DA120D1 – Rev 0
January, 2004
Package outline