APTGT25DA120D1 Boost chopper VCES = 1200V IC = 25A @ Tc = 80°C ® Trench IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 3 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration 6 7 3 2 2 1 4 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1200 40 25 65 ±20 140 Tj = 125°C 50A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2004 Q2 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT25DA120D1 – Rev 0 1 APTGT25DA120D1 All ratings @ Tj = 25°C unless otherwise specified VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage Erec Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Test Conditions IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =990A/µs IF = 25A VR = 600V di/dt =990A/µs TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight Typ 1.7 2.0 5.8 Typ 1.8 0.1 0.08 150 90 550 Max 5 2.1 6.5 400 V nA Max Unit nF ns 100 ns 650 180 Typ 1.6 1.6 Tj = 125°C 2 Tj = 25°C 2.7 Tj = 125°C 5 Min IGBT Diode Typ Max 2.1 -40 -40 -40 2 3 Unit V mJ µC Max 0.9 1.5 2500 APT website – http://www.advancedpower.com V 180 Min M5 M6 Unit V mA 130 Tj = 25°C Tj = 125°C Symbol Characteristic VISOL 5.0 Min Thermal and package characteristics RthJC Min 1200 Unit °C/W January, 2004 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current V 150 125 125 3.5 5 180 °C N.m g 2-3 APTGT25DA120D1 – Rev 0 Electrical Characteristics APTGT25DA120D1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT25DA120D1 – Rev 0 January, 2004 Package outline