CYSTEKEC BTA1759A3

CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 1/4
High Voltage PNP Epitaxial Planar Transistor
BTA1759A3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505A3.
Symbol
Outline
BTA1759A3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTA1759A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
-400
-400
-7
-300
625
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
-400
-400
-7
100
-
Typ.
-0.08
12
13
Max.
-10
-20
-10
-0.5
-1.2
270
-
Unit
V
V
V
µA
nA
µA
V
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-400V
VCE=-300V, REB=4kΩ
VEB=-6V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTA1759A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE=6V
Current Gain---HFE
Current Gain---HFE
VCE=10V
100
100
10
10
0.1
1
10
Collector Current---IC(mA)
0.1
100
Saturation Voltage vs Collector Current
1
10
Collector Current---IC(mA)
100
Saturation Voltage vs Collector Current
1
1
Saturation Voltage---(V)
Saturation Voltage---(V)
VCE(sat)@IC=10IB
0.1
0.01
VBE([email protected]=10IB
0.1
1
10
100
0.1
Collector Current---IC(mA)
700
0.7
600
Power Dissipation---PD(mW)
0.8
0.6
On Voltage---(V)
10
100
Power Derating Curve
On Voltage vs Collector Current
0.5
1
Collector Current---IC(mA)
VBE(on)@VCE=3V
0.4
0.3
0.2
0.1
0
500
400
300
200
100
0
0.1
1
10
Collector Current---IC(mA)
BTA1759A3
100
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
Spec. No. : C309A3-R
Issued Date : 2003.10.15
CYStech Electronics Corp.
Revised Date : 2004.04.02
Page No. : 4/4
TO-92 Dimension
Marking:
α2
A
B
1
2
3
A1759
α3
C
D
H
I
G
Style: Pin 1.Emitter 2.Base 3.Collector
α1
E
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1759A3
CYStek Product Specification