CYStech Electronics Corp. Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505A3. Symbol Outline BTA1759A3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTA1759A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg -400 -400 -7 -300 625 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. -400 -400 -7 100 - Typ. -0.08 12 13 Max. -10 -20 -10 -0.5 -1.2 270 - Unit V V V µA nA µA V V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTA1759A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=6V Current Gain---HFE Current Gain---HFE VCE=10V 100 100 10 10 0.1 1 10 Collector Current---IC(mA) 0.1 100 Saturation Voltage vs Collector Current 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1 1 Saturation Voltage---(V) Saturation Voltage---(V) VCE(sat)@IC=10IB 0.1 0.01 VBE(sat@IC=10IB 0.1 1 10 100 0.1 Collector Current---IC(mA) 700 0.7 600 Power Dissipation---PD(mW) 0.8 0.6 On Voltage---(V) 10 100 Power Derating Curve On Voltage vs Collector Current 0.5 1 Collector Current---IC(mA) VBE(on)@VCE=3V 0.4 0.3 0.2 0.1 0 500 400 300 200 100 0 0.1 1 10 Collector Current---IC(mA) BTA1759A3 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C309A3-R Issued Date : 2003.10.15 CYStech Electronics Corp. Revised Date : 2004.04.02 Page No. : 4/4 TO-92 Dimension Marking: α2 A B 1 2 3 A1759 α3 C D H I G Style: Pin 1.Emitter 2.Base 3.Collector α1 E 3-Lead TO-92 Plastic Package CYStek Package Code: A3 F *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1759A3 CYStek Product Specification