CYSTEKEC BTB1132M3

Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1132M3
Features
• Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA
• Complementary to BTD1664M3
Symbol
Outline
BTB1132M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
VCBO
VCEO
VEBO
IC
ICP
-40
-32
-5
-1
-2.5
0.6
2
150
-55~+150
V
V
V
A
A
Power Dissipation
Junction Temperature
Storage Temperature
Pd
Tj
Tstg
*1
*2
W
°C
°C
Note : *1 Single pulse, Pw=10ms
*2 When mounted on a 40 × 40 × 0.7mm ceramic board.
BTB1132M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-32
-5
82
-
Typ.
-0.15
150
20
Max.
-0.5
-0.5
-0.5
390
30
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V,IE=0
VEB=-4V,IC=0
IC=-500mA, IB=-50mA
VCE=-3V, IC=-0.1A
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank
Range
BTB1132M3
P
82~180
Q
120~270
R
180~390
CYStek Product Specification
Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
VCE(SAT)@IC=10IB
100
10
1
10
0.1
1
10
100
1000
Collector Current---IC(mA)
0.1
10000
100
1000
10000
Power Derating Curves
10000
2.5
[email protected]=10IB
Power Dissipation---PD(W)
Saturation Voltage---(mV)
10
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
2
See n ote 2 on page 1
1.5
1
0.5
0
100
0.1
1
10
100
1000
Collector Current---IC(mA)
BTB1132M3
1
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
BK*
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1132M3
CYStek Product Specification