Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1132M3 Features • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol Outline BTB1132M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) VCBO VCEO VEBO IC ICP -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 V V V A A Power Dissipation Junction Temperature Storage Temperature Pd Tj Tstg *1 *2 W °C °C Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board. BTB1132M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 - Typ. -0.15 150 20 Max. -0.5 -0.5 -0.5 390 30 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank Range BTB1132M3 P 82~180 Q 120~270 R 180~390 CYStek Product Specification Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=3V 100 VCE(SAT)@IC=10IB 100 10 1 10 0.1 1 10 100 1000 Collector Current---IC(mA) 0.1 10000 100 1000 10000 Power Derating Curves 10000 2.5 VBESAT@IC=10IB Power Dissipation---PD(W) Saturation Voltage---(mV) 10 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 2 See n ote 2 on page 1 1.5 1 0.5 0 100 0.1 1 10 100 1000 Collector Current---IC(mA) BTB1132M3 1 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C BK* D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1132M3 CYStek Product Specification