CYSTEKEC BTN8050BA3

Spec. No. : C223A3-B
Issued Date : 2004.02.18
Revised Date : 2004.02.23
CYStech Electronics Corp.
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTN8050BA3
Description
The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• High collector current , IC = 1.5A
• Low VCE(sat)
• Complementary to BTP8550BA3.
Symbol
Outline
BTN8050BA3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTN8050BA3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
40
25
6
1.5
1
150
-55~+150
V
V
V
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3-B
Issued Date : 2004.02.18
Revised Date : 2004.02.23
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
40
25
6
80
100
80
100
-
Typ.
9
Max.
100
100
0.5
1.2
1
500
-
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100µA
IC=2mA
IE=100µA
VCB=35V
VEB=6V
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
BTN8050BA3
C
100~180
D
160~300
E
250~500
CYStek Product Specification
Spec. No. : C223A3-B
Issued Date : 2004.02.18
Revised Date : 2004.02.23
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
[email protected]=2V
VCE(SAT)@IC=20IB
100
10
100
0.1
1
10
100
1
1000
10
100
1000
Collector Current ---IC(mA)
Collector Current--- IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=20IB
100
[email protected]=2V
0.1
1
10
100
Collector Current ---IC(mA)
1000
1
10
Collector Current---IC(mA)
100
Power Derating Curve
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTN8050BA3
CYStek Product Specification
Spec. No. : C223A3-B
Issued Date : 2004.02.18
Revised Date : 2004.02.23
CYStech Electronics Corp.
Page No. : 4/4
TO-92 Dimension
α2
A
Marking:
B
1
2
3
8050
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN8050BA3
CYStek Product Specification