Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1759N3 Symbol Outline BTC4505N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC4505N3 Symbol Limit Unit VCBO VCEO VEBO IC Pd Tj Tstg 400 400 6 300 0.225 150 -55~+150 V V V mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 - Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 - Unit V V V µA nA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kΩ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE = 10V VCE = 5V 10 VCE = 1V 1000 VCE(SAT) @ IC = 20IB 100 VCE(SAT) @ IC = 10IB 10 1 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 250 Power Dissipation---PD(mW) Saturation Voltage---(mV) 1000 VBE(SAT) @ IC =10IB 100 200 150 100 50 0 1 10 100 Collector Current---IC(mA) BTC4505N3 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE 3D S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505N3 CYStek Product Specification