Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505A3 Features • High breakdown voltage. (BVCEO = 400V) • Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA. • Complementary to BTA1759A3 Symbol Outline BTC4505A3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC4505A3 Symbol Limit Unit VCBO VCEO VEBO IC Pd Tj Tstg 400 400 6 300 625 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 - Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 - Unit V V V µA nA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kΩ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTC4505A3 CYStek Product Specification Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage-(mV) Current Gain---HFE HFE@VCE=10V 100 VCESAT@IC=10IB 1000 100 10 10 0.1 1 10 100 0.1 1000 100 1000 Power Derating Curve Saturation Voltage vs Collector Current 700 Power Dissipation---PD(mW) 10000 Saturation Voltage-(mV) 10 Collector Current ---IC(mA) Collector Current ---IC(mA) VBESAT@IC=10IB 1000 600 500 400 300 200 100 0 100 0.1 1 10 100 Collector Current--- IC(mA) BTC4505A3 1 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension Marking: α2 A B 1 2 C4505 3 α3 C D H I G Style: Pin 1.Emitter 2.Base 3.Collector α1 E 3-Lead TO-92 Plastic Package CYStek Package Code: A3 F *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505A3 CYStek Product Specification