CYSTEKEC BTC4505A3

Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 1/4
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505A3
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
Symbol
Outline
BTC4505A3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTC4505A3
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
400
400
6
300
625
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
400
400
6
100
-
Typ.
0.1
20
7
Max.
10
20
10
0.5
1.5
270
-
Unit
V
V
V
µA
nA
µA
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=400V, IE=0
VCE=300V, REB=4kΩ
VEB=6V,IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA, f=10MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC4505A3
CYStek Product Specification
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=10V
100
[email protected]=10IB
1000
100
10
10
0.1
1
10
100
0.1
1000
100
1000
Power Derating Curve
Saturation Voltage vs Collector Current
700
Power Dissipation---PD(mW)
10000
Saturation Voltage-(mV)
10
Collector Current ---IC(mA)
Collector Current ---IC(mA)
[email protected]=10IB
1000
600
500
400
300
200
100
0
100
0.1
1
10
100
Collector Current--- IC(mA)
BTC4505A3
1
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
Marking:
α2
A
B
1
2
C4505
3
α3
C
D
H
I
G
Style: Pin 1.Emitter 2.Base 3.Collector
α1
E
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505A3
CYStek Product Specification