CYSTEKEC BTD1864AI3

Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1864AI3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB1243AI3
Symbol
Outline
BTD1864AI3
TO-251
B:Base
C:Collector
E:Emitter
B
E
C
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
40
30
5
3
7
1
15
150
-55~+150
V
V
V
*1
A
W
°C
°C
Note : *1. Single Pulse Pw=10ms
BTD1864AI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
30
5
52
82
82
-
Typ.
0.25
90
45
Max.
1
1
0.5
2
560
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V. IE=0
VEB=4V,IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=0.1A
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
BTD1864AI3
P
82~180
Q
120~270
R
180~390
S
270~560
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 3/4
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
VCE=2V
[email protected]=20IB
100
10
1
100
1
10
100
1000
Collector Current---IC(mA)
1
10000
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
1000
Power Dissipation---PD(W)
Saturation Voltage---(mV)
16
[email protected]=10IB
100
0.1
1
10
100
1000
Collector Current---IC(mA)
14
12
10
8
6
4
2
0
0
50
100
150
200
Case Temperature---TC(℃)
Power Derating Curve
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD1864AI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 4/4
TO-251 Dimension
A
B
C
Marking:
D
D1864A
F
G
3
K
E
I
H
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
J
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0354
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
0.90
0.80
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1864AI3
CYStek Product Specification