CYSTEKEC BTD965A3

CYStech Electronics Corp.
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
Features
• Low VCE(sat), Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386A3
Equivalent Circuit
TO-92
BTD965A3
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
IC(cp)
Pd
Tj
Tstg
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Limits
Unit
40
20
7
5
8
*1
0.75
150
-55~+150
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Note : *1. Single Pulse Pw≦380us,Duty≦2%.
BTD965A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
20
7
230
150
-
Typ.
0.35
150
Max.
0.1
1
0.1
1.0
800
50
Unit
V
V
uA
uA
uA
V
MHz
pF
Test Conditions
IC=1mA, IB=0
IE=10uA, IC=0
VCB=10V. IE=0
VCB=10V. IE=0
VEB=7V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=2V, IC=2.00A
VCE=6V, IE=50mA, f=200MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
BTD965A3
Q
230~380
R
340~600
S
400~800
CYStek Product Specification
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage-(mV)
VCE(SAT)@IC=30IB
100
[email protected]=2V
10
100
1
10
100
1000
1
10000
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Cutoff Frequency vs Collector Current
Power Derating Curve
1000
800
Power Dissipation---PD(mW)
CutoffF Frequency---FT(MHZ)
[email protected]=6V
100
600
500
400
300
200
100
0
1
10
Collector Current---IC(mA)
BTD965A3
700
100
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
Marking:
α2
A
B
1
2
3
965
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD965A3
CYStek Product Specification