AOSMD AO4610

AO4610
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
n-channel
VDS (V) = 30V
ID = 8.5A(VGS=10V)
RDS(ON)
< 18mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
VF<[email protected]
p-channel
-30V
-7.1A(VGS = -10V)
RDS(ON)
< 25mΩ (VGS = -10V)
< 40mΩ (VGS = -4.5V)
D1
D2
S2/A
G2
S1
G1
1
2
3
4
D2/K
D2/K
D1
D1
8
7
6
5
K
A
G2
G1
S1
S2
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
8.5
TA=25°C
A
Current
6.6
TA=70°C
ID
B
Pulsed Drain Current
IDM
30
2
TA=25°C
PD
TA=70°C
1.28
Power Dissipation
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Parameter
Reverse Voltage
Continuous Forward
A
Current
TA=25°C
TA=70°C
B
Pulsed Forward Current
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Power Dissipation
A
Alpha & Omega Semiconductor, Ltd.
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
Units
V
V
A
W
-55 to 150
°C
Maximum Schottky
30
3
Units
V
2
20
A
2
1.28
-55 to 150
W
°C
AO4610
Thermal Characteristics: n-channel, Schottky and p-channel
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
Alpha Omega Semiconductor, Ltd.
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
60
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
40
°C/W
°C/W
°C/W
Schottky
Schottky
Schottky
47.5
71
32
62.5
110
40
°C/W
°C/W
°C/W
AO4610
N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
Typ
30
25
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Body-Diode+Schottky Forward Voltage
IS=1A
Maximum Body-Diode+Schottky Continuous Current
VGS=10V, ID=8.5A
TJ=125°C
1.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance (FET+Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
100
nA
3
V
15.5
18
22.3
27
23
28
mΩ
1
V
5.5
A
10
23
0.75
mΩ
S
1040
pF
180
pF
110
pF
0.7
Ω
19.2
nC
9.36
nC
2.6
nC
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8.5A
µA
A
VGS=4.5V, ID=6.6A
VDS=5V, ID=8.5A
Units
V
VDS=24V, VGS=0V
VGS(th)
IS
Max
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.2
nC
tD(on)
Turn-On DelayTime
5.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
4.4
ns
17.3
ns
3.3
ns
16.7
6.7
ns
nC
trr
Body-Diode+Schottky Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
Qrr
Body-Diode+Schottky Reverse Recovery Charge
IF=8.5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.5
0.007
0.05
Irm
Maximum reverse leakage current
VR=30V
VR=30V, TJ=125°C
3.2
10
VR=30V, TJ=150°C
Junction Capacitance
VR=15V
12
37
20
CT
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides
a single pulse rating.
Rev 4: July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4610
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4V
10V
25
20
3.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
28
Normalized On-Resistance
1.6
26
VGS=4.5V
24
RDS(ON) (mΩ)
2.5
22
20
18
VGS=10V
16
14
VGS=10V
ID=8.5A
1.4
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
1.0E+00
ID=8.5A
1.0E-01
30
IS (A)
RDS(ON) (mΩ)
40
125°C
125°C
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4610
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=8.5A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
250
0
Crss
0
0
4
8
12
16
20
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
50
RDS(ON)
limited
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
20
0
0.001
0.1
10
30
10
10s
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
30
TJ(Max)=150°C
TA=25°C
40
10µs
Power (W)
10.0
ID (Amps)
100µs
1ms
0.1
10
100
1000
AO4610
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
VGS=-10V, ID=-7.1A
TJ=125°C
VGS=-4.5V, ID=-5.6A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-7.1A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
-1
VDS=-24V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-7.1A
VGS=-10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
µA
-5
±100
nA
-2
-2.7
V
20
25
27
33
29
40
A
mΩ
mΩ
19.6
-0.7
S
-1
V
-4.2
A
1573
pF
319
pF
211
pF
6.7
Ω
30.9
nC
16.1
nC
8
nC
4.4
nC
9.5
ns
8
ns
44.2
ns
22.2
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-7.1A, dI/dt=100A/µs
25.5
Qrr
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs
14.7
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any agiven
a givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thett ≤≤10s
10sthermal
thermalresistance
resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4: July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
30
-10V
-5V
VDS=-5V
25
25
-4V
20
-ID(A)
-ID (A)
20
15
-3.5V
10
VGS=-3V
5
10
5
15
0
125°C
25°C
0
0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 17: Transfer Characteristics
-VDS (Volts)
Fig 16: On-Region Characteristics
40
Normalized On-Resistance
1.6
35
RDS(ON) (mΩ)
2
VGS=-4.5V
30
25
VGS=-10V
20
15
ID=-7.1A
1.4
VGS=-10V
1.2
VGS=-4.5V
ID=-5.6A
1
0.8
10
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 19: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 18: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
ID=-7.1A
50
125°C
40
-IS (A)
RDS(ON) (mΩ)
1.0E-01
125°C
30
1.0E-02
1.0E-03
1.0E-04
20
25°C
1.0E-05
25°C
1.0E-06
10
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 20: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 21: Body-Diode Characteristics
1.0
AO4610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
2250
10
VDS=-15V
ID=-7.1A
1750
Capacitance (pF)
-VGS (Volts)
8
2000
6
4
Ciss
1500
1250
1000
750
Coss
500
2
Crss
250
0
0
0
4
8
12
16
20
24
28
32
0
-Qg (nC)
Figure 22: Gate-Charge Characteristics
0.1s
20
25
30
TJ(Max)=150°C
TA=25°C
30
Power (W)
-ID (Amps)
10µs
100µs
RDS(ON)
limited
1ms
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
15
40
TJ(Max)=150°C, T A=25°C
1.0
10
-VDS (Volts)
Figure 23: Capacitance Characteristics
100.0
10.0
5
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 24: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000
AO4610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
125°C
Capacitance (pF)
IF (Amps)
1
200
0.1
0.01
150
100
50
25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.7
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
100
0.6
IF=3A
Leakage Current (mA)
VF (Volts)
5
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000