A-POWER AP18T20GH-HF

AP18T20GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristics
BVDSS
200V
RDS(ON)
ID
175mΩ
13.4A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP18T20 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial surface
mount applications and using infrared reflow technique and suited for
high current application due to the low connection resistance.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
13.4
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
8.5
A
40
A
83.3
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Value
Unit
1.5
℃/W
62.5
℃/W
1
201207251
AP18T20GH-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
Test Conditions
Min.
Typ.
200
-
-
V
VGS=10V, ID=8A
-
-
175
mΩ
VGS=4.5V, ID=5A
-
-
185
mΩ
VGS=0V, ID=250uA
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
24
-
S
IDSS
Drain-Source Leakage Current
VDS=160V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=8A
-
66
105
nC
Qgs
Gate-Source Charge
VDS=160V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
21
-
nC
td(on)
Turn-on Delay Time
VDD=100V
-
12
-
ns
tr
Rise Time
ID=8A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
50
-
ns
tf
Fall Time
VGS=10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
2900 4640
pF
Coss
Output Capacitance
VDS=25V
-
130
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
110
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
470
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18T20GH-HF
32
25
10V
7.0V
6.0V
5.0V
V G =4.0V
24
10V
7.0V
6.0V
5.0V
V GS =4.0V
o
T C =150 C
20
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 o C
16
15
10
8
5
0
0
0
4
8
12
16
0
20
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.6
I D =8A
V GS =10V
I D =1mA
2.4
Normalized RDS(ON)
Normalized BVDSS
1.4
1.2
1
2
1.6
1.2
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
8
I D =250uA
1.6
IS(A)
Normalized VGS(th)
6
4
T j =150 o C
1.2
0.8
o
T j =25 C
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18T20GH-HF
f=1.0MHz
4000
I D =8A
V DS =160V
10
3000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
Operation in this area limited
by RDS(ON)
10
ID (A)
100us
1ms
10ms
100ms
DC
1
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
16
ID , Drain Current (A)
VG
QG
12
10V
QGS
8
QGD
4
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4