A-POWER AP20GT60ASP-HF

AP20GT60ASP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),[email protected]=19A
▼ RoHS Compliant Product
G
C
E
VCES
600V
IC
19A
TO-220(P)
C
G
E
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VCES
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
+20
V
[email protected]=25oC
Collector Current
33
A
o
[email protected]=100 C
Collector Current
19
A
ICM
Pulsed Collector Current1
72
A
[email protected]=100oC
Diode Forward Current
8
A
IFM
Diode Pulse Forward Current
40
A
o
[email protected]=25 C
Maximum Power Dissipation
78.1
W
TSTG
Storage Temperature Range
-55 to 150
o
C
TJ
Operating Junction Temperature Range
150
o
C
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Value
Parameter
Symbol
Units
Thermal Resistance Junction-Case
1.6
o
C/W
Rthj-c(Diode) Thermal Resistance Junction-Case
2.4
o
C/W
62
o
C/W
Rthj-c
Rthj-a
Thermal Resistance Junction-Ambient
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+20V, VCE=0V
ICES
Collector-Emitter Leakage Current
VCE=600V, VGE=0V
-
-
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=19A
-
1.7
2.2
V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=25A
-
1.9
-
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
2
-
6
V
Qg
Total Gate Charge
IC=20A
-
95
150
nC
Qge
Gate-Emitter Charge
VCC=480V
-
16
-
nC
Qgc
Gate-Collector Charge
-
35
-
nC
td(on)
Turn-on Delay Time
-
40
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-off Delay Time
-
140
-
ns
tf
Fall Time
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
-
200
400
ns
Eon
Turn-On Switching Loss
-
0.1
-
mJ
Eoff
Turn-Off Switching Loss
-
1
-
mJ
Cies
Input Capacitance
VGE=0V
-
2760
4400
pF
Coes
Output Capacitance
VCE=30V
-
65
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
-
Typ.
-
Max. Units
+100 nA
VF
FRD Forward Voltage
IF=8A
-
1.8
2.4
V
trr
FRD Reverse Recovery Time
IF=8A
-
30
-
ns
Qrr
FRD Reverse Recovery Charge
di/dt = 100 A/μs
-
30
-
nC
Data and specifications subject to change without notice
1
201112271
AP20GT60ASP-HF
120
120
100
80
20V
18V
15V
12V
V GE =10V
100
IC , Collector Current (A)
T C =25 C
IC , Collector Current (A)
T C =150 o C
20V
18V
15V
12V
V GE =10V
o
60
40
80
60
40
20
20
0
0
0
2
4
6
0
8
2
V CE , Collector-Emitter Voltage (V)
4
6
8
10
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
3
V GE = 15 V
V GE =15V
80
T C =25 o C
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
T C =150 o C
60
40
20
3
I C = 40 A
2
I C =30A
2
1
1
0
0
1
2
3
4
5
0
6
40
V CE , Collector-Emitter Voltage (V)
80
120
160
Junction Temperature ( o C)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
8
f=1.0MHz
5000
Capacitance (pF)
IF , Forward Current (A)
4000
6
T j =150 o C
T j =25 o C
4
3000
C ies
2000
-
2
1000
0
-
0
0
0.4
0.8
1.2
1.6
2
V F , Forward Voltage (V)
Fig 5. Forward Characteristic of
2.4
1
5
9
13
17
21
25
29
C oes
C res
33
37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
Diode
2
AP20GT60ASP-HF
1
Normalized Thermal Response (Rthjc)
100
Power Dissipation (W)
80
60
40
20
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0
25
50
75
100
125
0.00001
150
0.0001
0.001
o
Fig7. Power Dissipation vs. Junction
Temperature
1
10
Fig 8. Effective Transient Thermal
Impedance
20
20
T C =25 o C
T C = 150 o C
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
0.1
t , Pulse Width (s)
Junction Temperature ( C )
15
10
5
I C = 60 A
40 A
20 A
0
15
10
5
I C = 60 A
40 A
20 A
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
16
1000
I C =20A
V CC =480V
100
12
IC ,Collctor Current(A)
VGE , Gate -Emitter Voltage (V)
0.01
8
10us
10
100us
1
4
1ms
0.1
T C =25 o C
Single Pulse
0
10ms
0.01
0
20
40
60
80
100
Q G , Gate Charge (nC)
Fig 11. Gate Charge Characterisitics
120
1
10
100
1000
10000
V CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
3