A-POWER AP20GT60P-HF

AP20GT60P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),[email protected]=20A
G
C
E
VCES
600V
IC
20A
TO-220(P)
C
▼ RoHS Compliant & Halogen-Free
G
E
Absolute Maximum Ratings
Parameter
Rating
Units
VCES
Symbol
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
+20
V
[email protected]=25oC
Collector Current
40
A
o
[email protected]=100 C
Collector Current
20
A
ICM
Pulsed Collector Current 1
160
A
[email protected]=25 C
Maximum Power Dissipation
104
W
TSTG
Storage Temperature Range
-55 to 150
o
C
TJ
Operating Junction Temperature Range
150
o
C
o
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Parameter
Units
1.2
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
62
o
C/W
o
C/W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current
VCE=600V, VGE=0V
-
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=20A
-
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=35A
-
2
-
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
2
-
7
V
Qg
Total Gate Charge
IC=20A
-
100
160
nC
Qge
Gate-Emitter Charge
VCC=480V
-
24
-
nC
Qgc
Gate-Collector Charge
-
40
-
nC
td(on)
Turn-on Delay Time
-
50
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-off Delay Time
-
135
-
ns
tf
Fall Time
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
-
190
380
ns
Eon
Turn-On Switching Loss
-
0.3
-
mJ
Eoff
Turn-Off Switching Loss
-
0.9
-
mJ
Test Conditions
VGE=+20V, VCE=0V
Min.
-
Typ.
-
Max.
+100
Units
nA
-
25
uA
1.8
2.5
V
Cies
Input Capacitance
VGE=0V
-
3400
5440
pF
Coes
Output Capacitance
VCE=30V
-
75
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Data and specifications subject to change without notice
1
201106013
AP20GT60P-HF
200
200
160
120
80
120
80
40
40
0
0
0
4
8
12
0
16
4
V CE , Collector-Emitter Voltage (V)
8
12
16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
4
V GE = 15 V
VCE(sat) ,Saturation Voltage(V)
V GE =15V
160
IC , Collector Current(A)
20V
18V
15V
12V
V GE =10V
160
IC , Collector Current (A)
T C =25 C
IC , Collector Current (A)
T C =150 o C
20V
18V
15V
12V
V GE =10V
o
T C =150 ℃
T C =25 ℃
120
80
40
3
I C = 40 A
I C =20A
2
1
0
0
2
4
6
0
8
40
V CE , Collector-Emitter Voltage (V)
80
120
160
Junction Temperature ( o C)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
1.6
5000
Capacitance (pF)
Normalized VGE(th) (V)
4000
1.2
0.8
C ies
3000
2000
-
0.4
1000
0
C oes
C res
0
-50
0
50
100
150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
1
5
9
13
17
21
25
29
33
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP20GT60P-HF
1
Normalized Thermal Response (R thjc)
160
Power Dissipation (W)
120
80
40
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0
0
50
100
150
0.00001
200
0.0001
0.001
o
Junction Temperature ( C )
1
10
Fig 8. Effective Transient Thermal
Impedance
20
20
T C =25 o C
T C = 150 o C
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
0.1
t , Pulse Width (s)
Fig7. Power Dissipation vs. Junction
Temperature
15
10
5
I C = 60 A
40 A
20 A
0
15
10
I C = 60 A
40 A
20 A
5
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
1000
16
V GE =15V
I C =20A
V CC =480V
o
T C =125 C
IC, Peak Collector Current(A)
VGE , Gate -Emitter Voltage (V)
0.01
12
8
4
100
10
Safe Operating Area
1
0
0
40
80
120
Q G , Gate Charge (nC)
Fig 11. Gate Charge Characterisitics
160
0.1
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
Fig 12. Turn-off SOA
3