A-POWER AP20GT60SW

AP20GT60SW
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
C
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),[email protected]=20A
▼ Built-in Fast Recovery Diode
VCES
600V
IC
20A
C
G
C
TO-3P
E
G
E
Absolute Maximum Ratings
Parameter
Rating
Units
VCES
Symbol
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
+20
V
[email protected]=25℃
Collector Current
40
A
[email protected]=100℃
Collector Current
20
A
ICM
Pulsed Collector Current 1
160
A
IDM
Collector to Emitter Diode Forward Current 1
40
A
[email protected]=25℃
Maximum Power Dissipation
125
W
TSTG
Storage Temperature Range
-55 to 150
o
TJ
Operating Junction Temperature Range
150
o
TL
Maximum Lead Temp. for Soldering Purposes
300
o
C
C
C
, 1/8" from case for 5 seconds .
Notes:
1. Pulse width limited by max. junction temperature .
Thermal Data
Parameter
Symbol
Rthj-c
o
C/W
1
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Units
Value
Thermal Resistance Junction-Case
o
C/W
1.5
Thermal Resistance Junction-Ambient
o
C/W
40
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+20V, VCE=0V
Min.
-
Typ.
-
Max.
+100
Units
nA
ICES
Collector-Emitter Leakage Current
VCE=600V, VGE=0V
-
-
100
uA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=20A
-
1.8
2.3
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
2
-
6
V
Qg
Total Gate Charge
IC=20A
-
100
160
nC
Qge
Gate-Emitter Charge
VCE=480V
-
24
-
nC
Qgc
Gate-Collector Charge
-
40
-
nC
td(on)
Turn-on Delay Time
-
50
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-off Delay Time
-
135
-
ns
tf
Fall Time
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
-
190
380
ns
Eon
Turn-On Switching Loss
-
0.3
-
mJ
Eoff
Turn-Off Switching Loss
-
0.9
-
mJ
Cies
Input Capacitance
VGE=0V
-
3400
5440
pF
Coes
Output Capacitance
VCE=30V
-
75
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
VF
FRD Forward Voltage
IF=20A
-
1.65
2
V
trr
FRD Reverse Recovery Time
IF=10A
-
50
-
ns
Qrr
FRD Reverse Recovery Charge
di/dt = 100 A/μs
-
80
-
nC
Data and specifications subject to change without notice
1
201105102
AP20GT60SW
200
16
IC , Collector Current (A)
T C =25 o C
160
VGE , Gate -Emitter Voltage (V)
20V
18V
15V
12V
V GE =10V
120
80
40
I C =20A
V CC =480V
12
8
4
0
0
0
2
4
6
8
10
0
12
20
40
V CE , Collector-Emitter Voltage (V)
60
80
100
120
Q G , Gate Charge (nC)
Fig 1. Typical Output Characteristics
Fig 2. Gate Charge Characterisitics
120
4
V GE = 15 V
V GE =15V
T C =25 ℃
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
T C =150 ℃
80
60
40
20
0
3
I C = 40 A
I C =20A
2
1
0
0
1
2
3
4
5
6
0
40
80
120
160
Junction Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
1.6
5000
I C =10mA
Capacitance (pF)
Normalized VGE(th) (V)
4000
C ies
1.2
0.8
3000
2000
-
0.4
1000
0
C oes
C res
0
-50
0
50
100
150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
1
5
9
13
17
21
25
29
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP20GT60SW
1
Normalized Thermal Response (Rthjc)
160
Power Dissipation (W)
120
80
40
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0
0
50
100
150
0.00001
200
0.0001
0.001
o
Junction Temperature ( C )
0.1
1
10
t , Pulse Width (s)
Fig7. Power Dissipation vs. Junction
Temperature
Fig 8. Effective Transient Thermal
Impedance
20
20
T C =25 o C
T C = 150 o C
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
0.01
15
10
5
I C = 60 A
40 A
20 A
0
15
10
5
I C = 60 A
40 A
20 A
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
20
IC, Peak Collector Current(A)
V GE =15V
IF , Forward Current (A)
16
T j =25 o C
o
T j =150 C
12
8
4
T C =125 o C
100
Safe Operating Area
0
1
0
0.4
0.8
1.2
1.6
2
V F , Forward Voltage (V)
Fig 11. Forward Characteristic of
2.4
0.1
1
10
100
1000
10000
V CE ,Collector-Emitter Voltage(V)
Fig 12. Turn-off SOA
Diode
3