A-POWER AP9987GJ

AP9987GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Performance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
80V
RDS(ON)
90mΩ
ID
15A
G
S
Description
G D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9987GJ) are
available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
℃
I @T =100℃
Gate-Source Voltage
+25
V
[email protected]=25
Continuous Drain Current, VGS @ 10V
15
A
Continuous Drain Current, VGS @ 10V
9
A
IDM
Pulsed Drain Current
50
A
Total Power Dissipation
34.7
W
Linear Derating Factor
0.28
W/
D
C
℃
[email protected]=25
1
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
℃
℃
℃
Thermal Data
Symbol
Parameter
Value
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
Data and specifications subject to change without notice
3.6
Units
℃/W
℃/W
℃/W
1
200908192
AP9987GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
80
-
-
-
0.09
-
VGS=10V, ID=10A
-
-
90
mΩ
VGS=4.5V, ID=7A
-
-
105
mΩ
VGS=0V, ID=250uA
℃, I =1mA
ΔBV /ΔT
Breakdown Voltage Temperature Coefficient Reference to 25
RDS(ON)
Static Drain-Source On-Resistance2
DSS
j
D
Max. Units
V
V/
℃
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=10A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C) VDS=64V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=10A
-
11
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=40V
-
8
-
ns
tr
Rise Time
ID=10A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3
tf
-
19
-
ns
Fall Time
Ω,V
R =4Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
980
1570
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
GS=10V
D
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
44
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9987GH/J
30
30
10V
7 .0V
5.0V
4.5V
20
V G =3.0V
10
20
V G =3.0V
10
0
0
0
3
6
9
0
12
3
9
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
ID=7A
T C =25 o C
I D = 10 A
V G =10V
Normalized RDS(ON)
1.6
140
RDS(ON) (m
)
6
V DS , Drain-to-Source Voltage (V)
180
Ω
10V
7 .0V
5.0V
4.5V
T C =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
100
1.3
1.0
0.7
trr
60
0.4
2
4
6
8
10
-50
0
50
100
o
V GS , Gate-to-Source Voltage (V)
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
T j =150 o C
6
Normalized VGS(th) (V)
IS(A)
8
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9987GH/J
f=1.0MHz
16
10000
12
V DS = 4 0V
V DS = 50 V
V DS = 64 V
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 10 A
8
100
C oss
4
C rss
10
0
0
5
10
15
20
1
25
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100.0
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10.0
1ms
1.0
10ms
100ms
DC
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
Qrr
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
QG
20
T j =25 o C
4.5V
T j =150 o C
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4