Phototransistors PNZ0111 Silicon NPN Phototransistor Unit : mm ø5.08±0.15 4.8 max. For optical control systems Features High sensitivity 16.0±1.0 2.67±0.15 Wide spectral sensitivity Base pin for easy circuit design Wide directional sensitivity : θ = 80 deg. (typ.) ø0.5±0.05 2-ø0.45 Absolute Maximum Ratings (Ta = 25˚C) 2 1 Parameter Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V 3 1: Emitter 2: Base 2: Collector 03 Unit 2. Ratings ±3˚ 45˚ Symbol 1.27 4. 8± 0. 15 2.54 Collector current IC 10 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle *2 min VCE = 10V, L = 500 lx*1 4.5 typ max Unit 0.05 2 µA 6 mA λP VCE = 10V 900 nm θ Measured from the optical axis to the half power point 80 Rise time tr*2 VCC = 10V, ICE(L) = 5mA 5 Fall time tf*2 RL = 100Ω Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 deg. 15 µs 6 15 µs 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,,,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) Please make a thorough study of the specifications. 1 Phototransistors PNZ0111 PC — Ta ICE(L) — VCE 80 60 40 20 0 20 40 60 Ambient temperature 80 16 12 750 lx 8 500 lx 4 250 lx 0 100 PC = 100mW L =2000 lx 1000 lx Ta (˚C ) 100 lx 0 10 ICEO — Ta 10 –1 10 –2 20 40 60 Ambient temperature 80 10˚ L = 500 lx S (%) 100 lx 20 120 VCC = 10V Ta = 25˚C 50˚ 10 2 60˚ 70˚ 80˚ 90˚ RL = 1kΩ 500Ω 10 100Ω 1 10 –1 10 –2 10 –1 Collector photo current 2 VCE = 10V Ta = 25˚C 80 60 40 1 0 200 400 600 800 1000 Wavelength λ (nm) Ta (˚C ) tr (µs) 40 80 tr — ICE(L) Rise time 60 Relative sensitivity S (%) 80 40 10 3 40˚ 100 0 Ambient temperature 30˚ 10 3 20 Ta (˚C ) 20˚ 10 2 L (lx) Spectral sensitivity characteristics 1 Directivity characteristics 0˚ 10 Illuminance 250 lx 10 –1 – 40 100 1 VCE (V) ICE(L) (mA) 1 Collector photo current ICEO (µA) 10 0 1 100 VCE = 10V T = 2856K VCE = 10V 10 –3 – 20 10 ICE(L) — Ta 10 VCE = 10V Ta = 25˚C T = 2856K 10 2 10 –1 30 Collector to emitter voltage 10 2 Dark current 20 Relative sensitivity 0 – 20 Ta = 25˚C T = 2856K ICE(L) (mA) 100 ICE(L) — L 10 3 Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 120 10 ICE(L) (mA) 1200