ETC PNZ147Q

Phototransistors
PNZ147 (PN147)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity
Type number : Emitter mark (Green)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
2.8±0.2
0.15
R0.9
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Emitter to collector voltage
VECO
5
V
IC
20
mA
Collector power dissipation
PC
50
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
0.85 ± 0.15
Absolute Maximum Ratings (Ta = 25˚C)
0.4±0.1
2.8±0.2 1.8
1.05±0.1
Small size designed for easier mounting to printed circuit board
1.8
2.2±0.15
(0.7)
45
Fast response : tr, tf = 3 µs (typ.)
Collector current
2
˚
Wide spectral sensitivity, matched to GaAs LEDs
(0.7)
1
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
ICE(L)1*3
ICE(L)2
Conditions
min
VCE = 10V
VCE = 10V, L = 2 lx*1
lx*1
max
Unit
0.5
µA
12
µA
3.5
mA
λP
VCE = 10V
800
nm
θ
Measured from the optical axis to the half power point
24
tr, tf*2
VCC = 10V, ICE(L) = 5mA, RL = 100Ω
3
10
µs
0.2
0.5
V
VCE(sat)
VCE = 10V, L = 500
3
typ
0.01
ICE(L) = 1mA, L = 1000
lx*1
deg.
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
;;;;
;;
50Ω
*3 I
CE(L)
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Classifications
Class
Q
R
S
ICE(L) (µA)
3.0 to 11.0
7.0 to 24.0
>16.0
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ147
PC — Ta
ICE(L) — VCE
40
30
20
10
Ta = 25˚C
T = 2856K
ICE(L) (µA)
50
ICE(L) — L
10 5
16
L =1500 lx
12
Collector photo current
ICE(L) (mA)
20
Collector photo current
Collector power dissipation
PC (mW)
60
1000 lx
8
500 lx
4
250 lx
VCE = 10V
Ta = 25˚C
T = 2856K
10 4
10 3
10 2
100 lx
0
– 20
0
20
40
60
Ambient temperature
80
0
100
Ta (˚C )
0
4
8
10 –3
10 –4
– 20
0
20
40
Ambient temperature
60
80
S (%)
1
50
40
30
20
30˚
40˚
50˚
60˚
70˚
80˚
tr , tf (µs)
60
80
120
VCC = 10V
Ta = 25˚C
RL = 1kΩ
10
500Ω
100Ω
1
10 –1
90˚
10 –2
10 –1
1
Collector photo current
2
VCE = 10V
Ta = 25˚C
80
60
40
10
0
200
400
600
800
1000
Wavelength λ (nm)
Ta (˚C )
tr , tf — ICE(L)
Rise time, Fall time
70
Relative sensitivity S (%)
90
40
10 2
100
80
0
Ambient temperature
20˚
10 3
20
Ta (˚C )
10˚
10 2
L (lx)
Spectral sensitivity characteristics
100
10
10 –1
– 40
100
10
1
Illuminance
VCE = 10V
T = 2856K
Directivity characteristics
0˚
10
24
Relative sensitivity
VCE = 10V
ICE(L) (mA)
Dark current
10 –2
20
VCE (V)
ICE(L) — Ta
10 2
Collector photo current
ICEO (µA)
10 –1
16
Collector to emitter voltage
ICEO — Ta
1
12
10 2
ICE(L) (mA)
1200
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2001 MAR