Power Transistors 2SD2375 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A PC 25 W TC = 25°C Ta = 25°C φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE which has satisfactory linearity • Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 Solder Dip ■ Features Collector power dissipation 4.6±0.2 9.9±0.3 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions ICBO VCB = 80 V, IE = 0 Min Typ Max Unit 100 µA ICEO VCE = 40 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6 V, IC = 0 100 µA Collector to emitter voltage VCEO Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 0.5 A 500 VCE(sat) IC = 2 A, IB = 0.05 A fT VCE = 12 V, IC = 0.2 A, f = 10 MHz V 1 500 1 50 V MHz Note) *: Rank classification Rank hFE Q P 500 to 1 000 800 to 1 500 Ordering can be made by the common rank (PQ rank hFE = 500 to 1 500) in the rank classification. 1 2SD2375 Power Transistors PC T a IC VCE 5 IB=1.0mA TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 32 28 (1) 24 20 16 12 8 0.8 0.8mA 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 4 (2) 3 2 1 0.1mA 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) IC 10 VCE=4V TC=25˚C 3000 1000 3 1 0.3 0.1 0.03 0.1 0.3 1 3 300 100 30 10 0.1 0.3 1 3 10ms 3 IC 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 30 10 3 1 1000 Collector to emitter voltage VCE (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) t=1ms VCE=12V f=10MHz TC=25˚C 0.1 0.01 0.03 10 103 10 I CP (1) Without heat sink (2) With a 100 × 80 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 1.2 0.3 Area of safe operation (ASO) 100 30 1.0 100 Collector current IC (A) Non repetitive pulse TC=25˚C 0.8 300 3 1 0.01 0.03 10 0.6 fT I C Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=40 TC=25˚C 0.01 0.01 0.03 0.4 1000 10000 30 0.2 Base to emitter voltage VBE (V) hFE IC 100 Collector current IC (A) Collector current IC (A) 4 0 0 2 VCE=5V TC=25˚C 0.9mA Collector current IC (A) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE 1.0 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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