ETC 2SD1267P

Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB0942 (2SB942) and 2SB0942A (2SB942A)
Unit: mm
■ Features
Parameter
(TC=25˚C)
Symbol
Collector to
2SD1267
base voltage
2SD1267A
Collector to
2SD1267
Ratings
V
80
60
VCEO
emitter voltage 2SD1267A
0.7±0.1
4.2±0.2
5.5±0.2
7.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
Unit
60
VCBO
16.7±0.3
■ Absolute Maximum Ratings
10.0±0.2
V
80
4.0
●
14.0±0.5
●
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
1.4±0.1
Solder Dip
●
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Collector power TC=25°C
dissipation
40
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
Symbol
2SD1267
current
2SD1267A
Collector cutoff
2SD1267
current
2SD1267A
ICES
ICEO
IEBO
Emitter cutoff current
Collector to emitter
2SD1267
voltage
2SD1267A
Forward current transfer ratio
Conditions
typ
max
400
VCB = 80V, VBE = 0
400
VCE = 30V, IB = 0
700
VCE = 60V, IB = 0
700
VEB = 5V, IC = 0
1
60
VCEO
IC = 30mA, IB = 0
hFE1*
VCE = 4V, IC = 1A
70
15
hFE2
VCE = 4V, IC = 3A
VBE
VCE = 4V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 4A, IB = 0.4A
Transition frequency
fT
VCE = 5V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
FE1
min
VCB = 60V, VBE = 0
Base to emitter voltage
*h
3
(TC=25˚C)
Parameter
Collector cutoff
2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
■ Electrical Characteristics
5.08±0.5
1
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
Unit
µA
µA
mA
V
80
250
2
1.5
V
V
20
MHz
0.4
µs
1.2
µs
0.5
µs
Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note)The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1267, 2SD1267A
PC — Ta
IC — VCE
(1)
40
30
20
(2)
10
8
TC=25˚C
100mA
4
80mA
60mA
40mA
3
30mA
2
20mA
10mA
(3)
(4)
6
TC=100˚C
–25˚C
0.4
1.2
5
4
3
2
1
5mA
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
4
8
12
16
20
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
hFE — IC
3000
Transition frequency fT (MHz)
TC=100˚C
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
300
1000
TC=100˚C
25˚C
100
–25˚C
30
10
3
0.1
0.3
1
3
Area of safe operation (ASO)
10 ICP
t=1ms
10ms
DC
0.3
0.01
1
3
10
30
2SD1267A
2SD1267
0.1
0.03
100
300
Collector to emitter voltage VCE
10
1000
(V)
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
1
30
1
0.01 0.03
10
103
3 IC
100
Collector current IC (A)
100
30
300
3
1
0.01 0.03
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
2.4
VCE=10V
f=1MHz
TC=25˚C
3000
1000
3
2.0
fT — IC
VCE=4V
Forward current transfer ratio hFE
10
1.6
10000
IC/IB=10
30
0.8
Base to emitter voltage VBE (V)
10000
100
Collector current IC (A)
Collector current IC (A)
25˚C
1
0
2
VCE=4V
7
IB=150mA
5
Collector current IC (A)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
6
Collector current IC (A)
Collector power dissipation PC (W)
50
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR