ETC 2SD1964P

Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
Unit: mm
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
25
A
Collector current
IC
15
A
4.2±0.2
5.5±0.2
4.2±0.2
2.7±0.2
7.5±0.2
16.7±0.3
●
10.0±0.2
φ3.1±0.1
4.0
●
14.0±0.5
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with
one screw
1.4±0.1
Solder Dip
●
0.7±0.1
■ Features
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
Collector power TC=25°C
PC
Ta=25°C
dissipation
50
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
■ Electrical Characteristics
5.08±0.5
1
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 100V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
50
µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
hFE1
VCE = 2V, IC = 0.1A
45
hFE2*
VCE = 2V, IC = 3A
90
hFE3
VCE = 2V, IC = 8A
30
VCE(sat)1
IC = 7A, IB = 0.35A
0.5
V
VCE(sat)2
IC = 15A, IB = 1.5A
1.5
V
VBE(sat)1
IC = 7A, IB = 0.35A
1.5
V
VBE(sat)2
IC = 15A, IB = 1.5A
2.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
*h
FE2
IC = 7A, IB1 = 0.7A, IB2 = – 0.7A,
VCC = 50V
V
260
20
MHz
0.5
µs
2.0
µs
0.2
µs
Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
1
Power Transistors
2SD1964
IC — VCE
50
40
30
20
TC=25˚C
IB=300mA
Collector current IC (A)
(2)
10
16
200mA
140mA
12
100mA
80mA
8
60mA
40mA
4
(4)
(3)
20mA
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
1
TC=100˚C
25˚C
–25˚C
0.1
0.03
0.3
1
3
10
3
TC=–25˚C
1
0.3
25˚C
100˚C
0.1
0.03
0.1
0.3
1
3
0.03
0.01
0.1
0.3
Switching time ton,tstg,tf (µs)
30
10
3
1
Collector current IC (A)
10
TC=100˚C
25˚C
100
–25˚C
30
10
3
0.3
1
3
10
30
Collector current IC (A)
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
ICP
t=1ms
3
tstg
1
ton
0.3
tf
0.1
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2)
VCC=50V
TC=25˚C
0.03
0.01
10
3
100
0.3
3
300
30
100
1
VCE=10V
1
0.1
10
ton, tstg, tf — IC
1
0.1
Collector current IC (A)
VCE=10V
f=1MHz
TC=25˚C
0.3
(1)
Collector current IC (A)
10
0.1
0.3
1000
fT — IC
0.1
0.01 0.03
(2)
IC/IB=10
0.01
0.01 0.03
10
1000
300
1
hFE — IC
30
Collector current IC (A)
Transition frequency fT (MHz)
12
3
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
3
0.01
0.1
10
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
VBE(sat) — IC
IC/IB=10
0.3
8
10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
6
Forward current transfer ratio hFE
0
Collector current IC (A)
Collector power dissipation PC (W)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
0
2
VCE(sat) — IC
20
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
60
0
1
2
3
4
5
6
7
Collector current IC (A)
10ms
IC
10
DC
3
1
0.3
0.1
0.03
0.01
8
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SD1964
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR