ETC BC635ZL1

BC635, BC637, BC639,
BC639-16
High Current Transistors
NPN Silicon
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
BC635
BC637
BC639
Collector-Base Voltage
45
60
80
1
EMITTER
VCBO
BC635
BC637
BC639
Emitter-Base Voltage
Vdc
45
60
80
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1
800
12
mW
mW/°C
–55 to
+150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
TJ, Tstg
 Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 3
2
3
TO–92 (TO–226AA)
CASE 29
STYLE 14
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
3
BASE
Vdc
1
Device
Package
Shipping
BC635RL1
TO–92
2000/Tape & Reel
BC635ZL1
TO–92
2000/Ammo Pack
BC637
TO–92
5000 Units/Box
BC639
TO–92
5000 Units/Box
BC639RL1
TO–92
2000/Tape & Reel
BC639ZL1
TO–92
2000/Ammo Pack
BC639–16ZL1
TO–92
2000/Ammo Pack
Publication Order Number:
BC635/D
BC635, BC637, BC639, BC639–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
45
60
80
—
—
—
—
—
—
120
—
—
45
60
80
—
—
—
—
—
—
5.0
—
—
Vdc
—
—
—
—
100
10
nAdc
µAdc
25
40
40
40
100
25
—
—
—
—
—
—
—
250
160
160
250
—
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 Adc, IB = 0)
V(BR)CEO
BC635
BC637
BC639
Collector–Emitter Zero–Gate Breakdown Voltage (1)
(IC = 100 Adc, IB = 0)
BC639–16
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
BC635
BC637
BC639
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
Vdc
Vdc
Vdc
ICBO
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
hFE
BC635
BC637
BC639
BC639–16ZLT1
(IC = 500 mA, VCE = 2.0 V)
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
—
—
1.0
Vdc
fT
—
200
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
50
—
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
http://onsemi.com
2
BC635, BC637, BC639, BC639–16
500
1000
VCE = 2 V
SOA = 1S
200
PD TA 25°C
100
50
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
500
PD TC 25°C
20
10
5
1
BC635
BC637
BC639
PD TA 25°C
PD TC 25°C
2
1
2
3 4 5
7 10
20 30 40 50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
100
50
20
100
1
3
10
30 50 100
IC, COLLECTOR CURRENT (mA)
300 500
1000
Figure 2. DC Current Gain
500
1
300
V, VOLTAGE (VOLTS)
0.8
VCE = 2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
20
1
10
100
IC, COLLECTOR CURRENT (mA)
0
1000
1
Figure 3. Current–Gain — Bandwidth Product
10
100
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
-0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
5
-1.0
VCE = 2 VOLTS
∆T = 0°C to +100°C
-1.6
-2.2
θV for VBE
1
3
5
10
30 50
100
IC, COLLECTOR CURRENT (mA)
300 500
Figure 5. Temperature Coefficients
http://onsemi.com
3
1000
1000
BC635, BC637, BC639, BC639–16
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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For additional information, please contact your local
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4
BC635/D