BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage Vdc 45 60 80 VEBO 5.0 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1 800 12 mW mW/°C –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Operating and Storage Junction Temperature Range TJ, Tstg Semiconductor Components Industries, LLC, 2001 June, 2000 – Rev. 3 2 3 TO–92 (TO–226AA) CASE 29 STYLE 14 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 3 BASE Vdc 1 Device Package Shipping BC635RL1 TO–92 2000/Tape & Reel BC635ZL1 TO–92 2000/Ammo Pack BC637 TO–92 5000 Units/Box BC639 TO–92 5000 Units/Box BC639RL1 TO–92 2000/Tape & Reel BC639ZL1 TO–92 2000/Ammo Pack BC639–16ZL1 TO–92 2000/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639, BC639–16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 60 80 — — — — — — 120 — — 45 60 80 — — — — — — 5.0 — — Vdc — — — — 100 10 nAdc µAdc 25 40 40 40 100 25 — — — — — — — 250 160 160 250 — OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (IC = 10 Adc, IB = 0) V(BR)CEO BC635 BC637 BC639 Collector–Emitter Zero–Gate Breakdown Voltage (1) (IC = 100 Adc, IB = 0) BC639–16 V(BR)CES Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO BC635 BC637 BC639 Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) Vdc Vdc Vdc ICBO ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 BC639–16ZLT1 (IC = 500 mA, VCE = 2.0 V) — Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) — — 0.5 Vdc Base–Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) — — 1.0 Vdc fT — 200 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 — pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 50 — pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 BC635, BC637, BC639, BC639–16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25°C 100 50 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 PD TC 25°C 20 10 5 1 BC635 BC637 BC639 PD TA 25°C PD TC 25°C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current–Gain — Bandwidth Product 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. “Saturation” and “On” Voltages -0.2 θV, TEMPERATURE COEFFICIENTS (mV/°C) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 -1.0 VCE = 2 VOLTS ∆T = 0°C to +100°C -1.6 -2.2 θV for VBE 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC635, BC637, BC639, BC639–16 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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