ETC BF420/D

ON Semiconductor
High Voltage Transistors
BF420
BF422
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BF420
BF422
Unit
Collector–Emitter Voltage
VCEO
300
250
Vdc
Collector–Base Voltage
VCBO
300
250
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–11, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
2
3
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
250
—
—
300
250
—
—
5.0
5.0
—
—
—
—
0.01
—
—
—
100
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
BF420
BF422
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
Vdc
V(BR)CBO
BF420
BF422
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
Vdc
V(BR)EBO
BF420
BF422
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Vdc
µAdc
ICBO
BF420
BF422
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
BF420
BF422
nAdc
1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
BF420/D
BF420 BF422
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
50
50
—
—
—
0.5
—
2.0
60
—
—
1.6
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
hFE
BF420
BF422
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cre
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2
pF
BF420 BF422
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
-55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f,
T CURRENT-GAIN BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
1.0
1000
TJ = 25°C
VCE = 20 V
f = 20 MHz
Figure 2. Capacitance
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current–Gain – Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
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3
BF420 BF422
PACKAGE DIMENSIONS
CASE 029–11
(TO–226AA)
ISSUE AJ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BF420/D