ETC 2SD1199S

Transistor
2SD1199
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
1.5
■ Absolute Maximum Ratings
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1.0
4.5±0.1
0.45±0.05
2
1
2.5
1:Base
2:Collector
3:Emitter
2.5
EIAJ:SC–71
M Type Mold Package
(Ta=25˚C)
Symbol
Collector cutoff current
0.
7
3
Symbol
Parameter
0.55±0.1
(Ta=25˚C)
Parameter
■ Electrical Characteristics
0.85
4.1±0.2
●
2.4±0.2 2.0±0.2 3.5±0.1
●
1.25±0.05
●
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
Conditions
ICBO
VCB = 20V, IE = 0
min
typ
max
Unit
100
nA
1
µA
ICEO
VCE = 20V, IB = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
40
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
15
V
Forward current transfer ratio
hFE
*
VCE = 10V, IC = 2mA
400
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.05
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
120
MHz
80
mV
Noise voltage
*h
FE
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
2000
0.2
V
Rank classification
Rank
R
hFE
400 ~ 800
S
T
600 ~ 1200 1000 ~ 2000
1
Transistor
2SD1199
PC — Ta
IC — VCE
120
200
100
120
IB=100µA
90µA
80µA
70µA
60µA
100
80
50µA
60
40µA
30µA
40
20µA
20
Collector current IC (mA)
300
60
80 100 120 140 160
2
4
6
8
10
12
1800
Forward current transfer ratio hFE
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
10
30
Ta=75˚C
900
25˚C
–25˚C
600
300
0
0.1
100
Collector current IC (mA)
0.3
Cob — VCB
1
3
IE=0
f=1MHz
Ta=25˚C
Noise voltage NV (mV)
5
4
3
2
80
10
30
150
100
50
0
– 0.1 – 0.3
100
–1
–3
1
3
10
30
100
Collector to base voltage VCB (V)
–100
NV — VCE
Rg=100kΩ
Rg=100kΩ
60
22kΩ
40
5kΩ
20
80
60
22kΩ
40
5kΩ
20
IC=1mA
GV=80dB
Function=FLAT
Ta=25˚C
0
0.03
–30
100
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
0
0.01
–10
Emitter current IE (mA)
1
0
2.0
200
NV — IC
100
6
1.6
VCB=10V
Ta=25˚C
Collector current IC (mA)
8
7
1.2
250
Noise voltage NV (mV)
3
0.8
VCE=10V
1200
3
1
0.4
Base to emitter voltage VBE (V)
fT — I E
1500
10
0.3
0
hFE — IC
30
0.01
0.1
40
Collector to emitter voltage VCE (V)
IC/IB=10
0.1
60
0
0
VCE(sat) — IC
100
–25˚C
20
Transition frequency fT (MHz)
40
Ta=75˚C
80
10µA
0
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
100
400
0
Collector output capacitance Cob (pF)
VCE=10V
Ta=25˚C
140
0
2
IC — VBE
160
Collector current IC (mA)
Collector power dissipation PC (mW)
500
0.1
0.3
Collector current IC (mA)
1
1
3
10
30
100
Collector to emitter voltage VCE (V)
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2001 MAR