Transistor 2SB0792, 2SB0792A (2SB792, 2SB792A) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm +0.2 2.8 –0.3 2SB0792 base voltage 2SB0792A Collector to 2SB0792 –150 V –185 –150 VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol voltage 2SB0792A Emitter to base voltage Forward current 2SB0792 transfer ratio 2SB0792A Conditions 1.45 +0.1 typ VCEO IC = –100µA, IB = 0 VEBO IE = –10µA, IC = 0 hFE* VCE = –5V, IC = –10mA Unit –1 µA V –185 –5 IC = –30µA, IB = –3mA fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz V 130 450 130 330 –1 VCE = –10V, IC = –1mA, GV = 80dB, NV max –150 VCE(sat) FE 0.95 min Transition frequency *h 1.9±0.2 Marking symbol : I(2SB0792) 2F(2SB0792A) Collector to emitter saturation voltage Noise voltage JEDEC:TO–236 EIAJ:SC–59 Mini Type Package VCB = –100V, IE = 0 ICBO 2SB0792 1:Base 2:Emitter 3:Collector (Ta=25˚C) Parameter Collector to emitter 0.1 to 0.3 0.4±0.2 V –185 Emitter to base voltage Collector cutoff current +0.1 Unit 0.16 –0.06 Ratings VCEO ■ Electrical Characteristics 0.95 2 VCBO emitter voltage 2SB0792A 3 (Ta=25˚C) Symbol Collector to 1 0 to 0.1 Parameter 0.65±0.15 0.8 ■ Absolute Maximum Ratings +0.2 ● 2.9 –0.05 ● 0.65±0.15 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 1.1 –0.1 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 Rg = 100kΩ, Function = FLAT V 200 MHz 4 pF 150 mV Rank classification Marking Symbol Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 IR IS IT 2FR 2FS — 2SB0792 2SB0792A Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistor 2SB0792, 2SB0792A PC — Ta IC — VCE –120 160 120 80 40 IB=–10mA –9mA –8mA –7mA –6mA –5mA –80 –70 –60 –4mA –50 –3mA –40 –2mA –30 –20 –1mA Ta=75˚C –25˚C –80 –60 –40 –20 –10 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –10 –30 –100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 8 7 6 5 4 3 2 1 0 –1 –3 –10 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 250 500 400 Ta=75˚C 25˚C –25˚C 200 –2.0 VCB=–10V Ta=25˚C 225 300 –1.6 Base to emitter voltage VBE (V) fT — I E 100 200 175 150 125 100 75 50 25 0 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) 10 9 –12 VCE=–5V Forward current transfer ratio hFE –30 –3 –10 600 IC/IB=10 –1 –8 hFE — IC –100 – 0.01 – 0.1 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C –100 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C –90 0 2 IC — VBE –100 Collector current IC (mA) Collector power dissipation PC (mW) 240 –100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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