ETC 2SD1256P

Power Transistors
2SD1256
Silicon NPN epitaxial planar type
10.0±0.3
1.5±0.1
2.0
0.8±0.1
2.54±0.3
5.08±0.5
1
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
R0.5
R0.5
0 to 0.4
2.54±0.3
W
1.3
■ Electrical Characteristics
1.0±0.1
0.8±0.1
40
PC
6.0±0.3
14.7±0.5
VCBO
3.4±0.3
+0.4
Collector to base voltage
Unit: mm
8.5±0.2
+0
Unit
1.5–0.4
Ratings
10.0±0.3
Symbol
dissipation
1:Base
2:Collector
3:Emitter
N Type Package
3
2.0
Parameter
Collector power TC=25°C
2
(TC=25˚C)
4.4±0.5
■ Absolute Maximum Ratings
0.5max.
3.0–0.2
●
1.1max.
4.4±0.5
●
1.0±0.1
1.5max.
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
●
Unit: mm
6.0±0.5
■ Features
●
3.4±0.3
8.5±0.2
For power switching
Complementary to 2SB0933 (2SB933)
1.1 max.
5.08±0.5
150
˚C
–55 to +150
˚C
1
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
10
µA
50
µA
ICBO
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
hFE1
VCE = 2V, IC = 0.1A
45
hFE2*
VCE = 2V, IC = 2A
60
Collector to emitter saturation voltage
VCE(sat)
IC = 4A, IB = 0.2A
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 4A, IB = 0.2A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
*h
FE2
VCB = 100V, IE = 0
max
Collector cutoff current
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
V
260
30
MHz
0.5
µs
1.5
µs
0.15
µs
Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
1
Power Transistors
2SD1256
IC — VCE
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
(1)
40
30
20
TC=25˚C
IB=100mA
5
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat) — IC
6
10
70mA
50mA
4
40mA
3
30mA
2
20mA
10mA
1
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
TC=–25˚C
100˚C
25˚C
0.1
0.03
0.1
0.3
1
3
300 T =100˚C
C
25˚C
–25˚C
100
30
10
3
0.01
0.01 0.03
0.1
0.3
1
3
Switching time ton,tstg,tf (µs)
100
30
10
3
Collector to base voltage VCB (V)
10
100
30
10
10
0.1
0.3
1
3
10
Area of safe operation (ASO)
3
tstg
1
ton
tf
0.3
Non repetitive pulse
TC=25˚C
30
0.1
ICP
10
IC
t=0.5ms
3
10ms
1
1ms
0.3
300ms
0.1
0.03
0.01
0.01
100
3
100
0.03
30
1
Collector current IC (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10(IB1=–IB2)
VCC=50V
TC=25˚C
30
300
0.3
300
1
0.01 0.03
10
ton, tstg, tf — IC
1000
0.1
VCE=10V
f=10MHz
TC=25˚C
Collector current IC (A)
IE=0
f=1MHz
TC=25˚C
10
0.03
3
100
3
–25˚C
1000
Cob — VCB
1
25˚C
0.1
3000
1
0.01 0.03
10
10000
0.3
TC=100˚C
0.3
VCE=2V
3000
Collector current IC (A)
3000
1
fT — IC
1000
0.3
3
Collector current IC (A)
Transition frequency fT (MHz)
10
1
10
10000
IC/IB=20
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
6
IC/IB=20
30
hFE — IC
30
1
0.1
5
10000
0.01
0.01 0.03
Collector output capacitance Cob (pF)
4
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
2
3
Collector current IC (A)
0
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
50
0
1
2
3
4
Collector current IC (A)
5
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SD1256
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR