BTA10 GP TRIACS .. .. FEATURES LOW IH = 13mA max HIGH SURGE CURRENT : ITSM = 120A IGT SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) A1 A2 DESCRIPTION The BTA10 GP’s use high performance, glass passivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications. G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit RMS on-state current (360° conduction angle) Tc = 90 °C 10 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 126 A tp = 10 ms 120 I2 t value tp = 10 ms 72 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C BTA10- Unit 400 GP 600 GP 400 600 V 1/4 BTA10 GP THERMAL RESISTANCES Symbol Value Unit 60 °C/W Rth (j-c) DC Junction to case for DC 4 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 3 °C/W Rth (j-a) Parameter Junction to ambient GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit GP IGT VD=12V (DC) RL=33Ω (DC) RL=33Ω Tj=25°C I-II-III MAX 50 IV MAX 75 Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III-IV TYP 2 µs IL IG=1.2 IGT Tj=25°C I-III- IV TYP 20 mA II 40 IH * IT= 100mA gate open Tj=25°C MAX 13 mA VTM * ITM = 14A tp= 380µs Tj=25°C MAX 1.5 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.5 Tj=110°C MIN 30 TYP 100 MIN 1 TYP 10 dV/dt * (dV/dt)c * Rated Rated Linear slope up to VD=67%VDRM gate open (dI/dt)c= 2.2A/ms Tj=110°C * For either polarity of electrode A2 voltage with reference to electrode A1. 2/4 mA V/µs V/µs BTA10 GP Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. 14 180 14 O o 12 o 10 = 120 8 = 90 = 60 6 = 30 1 6 o 4 2 3 -95 -105 o 4 5 6 7 8 9 -115 2 I T(RMS) (A) 0 -85 8 o 2 0 Rth = 0 o C/W 2.5 o C/W o 5 C/W 10 o C/W 12 = 180 10 4 Tcase (o C) P (W) P(W) o Tamb ( C) 10 Fig.3 : RMS on-state current versus case temperature. 0 0 20 40 60 80 100 120 -125 140 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth I T(RMS) (A) 1 12 10 Zt h( j-c) 8 0.1 6 = 180 Zt h( j-a) o 4 2 o Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 3/4 BTA10 GP Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding values of I2t. Fig.8 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO220AB Plastic REF. H A J G I D B F O P L C M = N = Cooling method : C Marking : type number Weight : 2.3 g A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4