FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in WLL and MMDS base station amplifiers as it offers high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 125 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. Unit Drain Current IDSS VDS = 5V, VGS = 0V - 24 32 A Transconductance gm VDS = 5V, IDS = 14.4A - 12 - S Pinch-Off Voltage Vp VDS = 5V, IDS = 1.44A -1.0 -2.0 -3.5 V -5 - - V 47.0 48.0 - dBm 9.0 10.0 - dB Gate-Source Breakdown Voltage VGSO Output Power at 1 dB G.C.P. P1dB IGS = -1.44mA VDS = 12V f=2.7 GHz IDS = 4.0A Power Gain at 1 dB G.C.P. G1dB Drain Current IDSR - 11.0 15.0 A Power-Added Efficiency ηadd - 43 - % Rth - 0.8 1.2 °C/W Thermal Resistance Channel to Case CASE STYLE: IQ Edition 1.7 December 1999 G.C.P.: Gain Compression Point 1 FLL600IQ-3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE OUTPUT POWER & ηadd vs. INPUT POWER 140 50 Pout 47 80 60 40 20 0 50 100 150 200 45 43 41 60 39 50 ηadd 37 40 35 30 33 20 31 10 Case Temperature (°C) 0 29 20 22 24 26 28 30 32 34 Input Power (dBm) OUTPUT POWER vs. FREQUENCY 51 VDS = 12.0V IDS = 4.0A f = 2.7GHz Pin=40dBm 49 38dBm 47 35dBm 45 43 30dBm 41 39 37 25dBm 35 2.4 2.5 2.6 2.7 Frequency (GHz) 2 2.8 36 38 40 ηadd (%) Output Power (dBm) 100 Output Power (dBm) Total Power Dissipation (W) VDS = 12.0V IDS = 4.0A f = 2.7GHz 49 120 FLL600IQ-3 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD -28 -32 VDS = 12V IDS = 4.0A f = 2.7GHz ∆f = 5.0MHz 2-tone test IM3 -36 IMD (dBc) -40 IM5 -44 -48 -52 -56 -60 26 28 30 32 34 36 38 40 42 44 Total Output Power (dBm) S-PARAMETERS VDS = 12V, IDS = 2000mA FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 S11 S21 S12 MAG ANG MAG ANG .978 .974 .972 .962 .961 .952 .944 .933 .924 .901 .881 .853 .816 .778 .736 .704 .636 .579 .508 .439 .439 .562 .700 .755 .723 .648 .579 .477 .318 178.4 176.4 175.0 173.6 172.5 170.7 168.6 167.0 165.2 162.7 160.4 157.8 155.2 152.9 151.0 148.6 146.2 145.5 145.9 152.3 166.3 172.4 162.6 146.1 126.8 107.1 74.7 26.1 -33.9 .905 .793 .729 .684 .690 .688 .718 .740 .784 .836 .898 .959 1.043 1.116 1.231 1.386 1.566 1.730 1.998 2.278 2.605 2.774 2.675 2.312 1.967 1.649 1.536 1.338 .963 76.5 73.0 69.5 66.2 62.2 57.1 51.1 44.6 37.5 29.6 20.8 11.6 1.3 -10.0 -20.8 -32.8 -47.5 -61.5 -78.1 -97.6 -116.1 -144.5 -173.0 160.3 137.9 119.3 101.2 78.5 58.0 MAG .005 .005 .006 .006 .008 .009 .011 .013 .014 .016 .018 .020 .023 .024 .026 .029 .026 .025 .025 .023 .020 .013 .013 .016 .021 .026 .034 .040 .038 S22 ANG 47.5 51.3 61.1 58.1 51.9 51.7 56.7 50.1 46.6 42.9 36.2 28.6 23.3 16.5 7.8 -9.8 -22.1 -30.4 -45.0 -65.2 -94.7 -141.0 137.0 85.1 51.3 37.5 23.2 2.4 -21.5 MAG .807 .895 .896 .886 .873 .866 .858 .844 .832 .823 .814 .815 .818 .828 .843 .864 .871 .887 .876 .843 .782 .697 .661 .692 .748 .805 .841 .875 .909 ANG 176.5 175.3 174.9 174.1 173.1 172.4 171.7 171.3 171.1 171.0 171.2 171.7 172.6 172.9 173.3 172.4 171.2 169.9 167.5 164.8 163.6 166.2 173.7 -179.9 -177.1 -176.7 -177.3 -178.6 179.2 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL600IQ-3 L-Band Medium & High Power GaAs FET 1 17.4 (0.685) 8.0 (0.315) 3 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4-R1.3 (0.051) ±0.2 0.1 (0.004) ±0.2 2 2.5 MIN. Case Style "IQ" ±0.2 6.0 (0.236) ±0.13 2.4 (0.094) ±0.2 4.4 Max. 1.9 (0.075) 16.4 (0.646) 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) ±0.2 20.4 (0.803) ±0.2 24.0 (0.945) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4