N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HED880 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 30W VCBO ——Collector-Base Voltage……………………………60V VCEO——Collector-Emitter Voltage………………………… 60V 1―Base，B VEBO ——Emitter-Base Voltage……………………………… 7V 2―Collector，C 3―Emitter, E IC——Collector Current……………………………………… 3A Ib——Base Current………………………………………0.3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ ６０ Collector Cut-off Current Emitter Cut-off Current HFE（1） DC Current Gain ６０ HFE（2） DC Current Gain ２０ VCE(sat) Collector- Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Max Unit Test Conditions Ｖ VCE=5V, IC=3A ０．４ １ Ｖ IC=3A, IB =0.3A ０．７ １ Ｖ VCE=5V, IC=0.5A Current Gain-Bandwidth Product ３ Cob Output Capacitance ７０ tON Turn-On Time ０．８ μＳ tSTG Storage Time １．５ μＳ Fall Time ０．８ μＳ BVCEO ICBO Collector-Emitter Breakdown Voltage IEBO ft tF IC=50mA, IB=0 １００ μＡ VCB=60V, IE=0 １００ μＡ VEB=7V, IC=0 ３００ VCE=5V, IC=0.5A ＭＨｚ VCE=5V, IC=0.5A, ｐＦ VCB=10V, IE=0，f=1ＭＨｚ █ hFE Classification O ６０—１２０ Y GR １００—２００ １５０—３００ IB1 = -IB2 =0.2A VCC=30V Shantou Huashan Electronic Devices Co.,Ltd. HED880