IXYS IXTH12N120

VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4 Ω
IXTH 12N120
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ
= 25°C to 150°C
1200
V
VDGR
TJ
= 25°C to 150°C; RGS = 1 MΩ
1200
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC
= 25°C
12
A
IDM
TC
= 25°C, pulse width limited by TJM
48
A
12
A
IAR
TO-247 AD
D (TAB)
G = Gate,
S = Source,
EAR
EAS
TC
TC
= 25°C
= 25°C
30
1.0
mJ
J
PD
TC
= 25°C
500
W
-55 ... +150
°C
TJM
150
°C
Features
Tstg
-55 ... +150
°C
z
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
g
300
°C
D = Drain,
TAB = Drain
International standard package
JEDEC TO-247 AD
z
Low RDS (on) HDMOSTM process
z
Rugged polysilicon gate cell structure
z
Fast switching times
Applications
z
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
3
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
z
z
Uninterruptible Power Supplies (UPS)
z
DC choppers
V
5
V
±100
nA
25
3
µA
mA
1.4
Ω
Switch-mode and resonant-mode
power supplies
Motor controls
Advantages
z
z
z
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DS98937E(04/04)
IXTH 12N120
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
6
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
10
S
3400
pF
280
pF
C rss
105
pF
td(on)
24
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, 0.5 ID25
25
ns
td(off)
RG = 1.5 Ω (External)
35
ns
tf
17
ns
Qg(on)
95
nC
22
nC
50
nC
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
RthJC
0.25
RthCK
0.25
Source-Drain Diode
TO-247 AD Outline
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive; pulse width limited by TJM
48
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
850
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTH 12N120
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25º C
20
12
VGS = 10V
11
8V
16
14
7V
8
I D - Amperes
I D - Amperes
9
VGS = 10V
18
8V
7.5V
10
7
6
6.5V
5
4
3
10
7V
8
6
6.5V
4
6V
2
6.5V
12
6V
2
1
0
0
0
2
4
6
8
10
12
14
16
18
0
3
6
9
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
11
2.8
9
8
R D S ( o n ) - Normalized
8V
7V
10
I D - Amperes
15
V D S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs . Junction Tem perature
12
6.5V
7
6
6V
5
4
3
5.5V
2
VGS = 10V
2.5
2.2
1.9
I D = 12A
1.6
I D = 6A
1.3
1
0.7
5V
1
0.4
0
0
4
8
12
16
20
24
V D S - Volts
28
32
36
-50
40
0
25
50
75
100
125
150
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
0.5 ID25 Value vs. ID
14
2.8
2.6
-25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alize d to
VGS = 10V
12
2.4
10
TJ = 125ºC
2.2
I D - Amperes
R D S ( o n ) - Normalized
12
2
1.8
1.6
1.4
8
6
4
TJ = 25ºC
1.2
2
1
0.8
0
0
2
4
6
8
10
12
I D - Amperes
© 2004 IXYS All rights reserved
14
16
18
20
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTH 12N120
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
20
16
18
14
16
10
8
6
TJ = 125ºC
4
TJ = -40ºC
14
g f s - Siemens
I D - Amperes
12
25ºC
125ºC
12
10
8
6
25ºC
-40ºC
4
2
2
0
0
4.5
5
5.5
6
6.5
7
0
7.5
2
4
6
V G S - Volts
Fig. 9. Source Current vs.
Source -To-Drain Voltage
10
33
9
VDS = 600V
8
I D = 6A
7
I G = 10mA
30
27
24
VG S - Volts
I S - Amperes
10
12
14
16
18
90
100
Fig. 10. Gate Charge
36
21
18
15
TJ = 125ºC
12
8
I D - Amperes
6
5
4
3
9
2
TJ = 25ºC
6
1
3
0
0
0.4
0.5
0.6
0.7
V S D - Volts
0.8
0.9
0
1
10
20
30
40
50
60
70
80
Q G - nanoCoulombs
Fig. 12. Maxim um Trans ient Therm al
Resistance
Fig. 11. Capacitance
10000
1.00
C iss
R( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
1000
C oss
100
0.10
C rss
10
0.01
0
5
10
15
20
25
V D S - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
Pulse Width - milliseconds
1000