ETC 2SA1123R

Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
Unit: mm
●
●
●
Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier.
■ Absolute Maximum Ratings
+0.2
1.27
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–150
V
Collector to emitter voltage
VCEO
–150
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–100
mA
Collector current
IC
–50
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
0.45 –0.1
0.45 –0.1
(Ta=25˚C)
1.27
2.3±0.2
●
13.5±0.5
■ Features
4.0±0.2
5.1±0.2
5.0±0.2
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
–1
µA
Collector cutoff current
ICBO
VCB = –100V, IE = 0
Collector to emitter voltage
VCEO
IC = –0.1mA, IB = 0
–150
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–5
V
Forward current transfer ratio
hFE
*
VCE = –5V, IC = –10mA
130
Collector to emitter saturation voltage
VCE(sat)
IC = –30mA, IB = –3mA
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
Noise voltage
NV
*h
FE
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
450
–1
200
150
V
MHz
5
pF
300
mV
Rank classification
Rank
R
S
T
hFE
130 ~ 220
185 ~ 330
260 ~ 450
1
2SA1123
Transistor
PC — Ta
IC — VCE
–120
–70
0.6
0.5
0.4
0.3
0.2
IB=–500µA
–450µA
–400µA
–350µA
–300µA
–250µA
–200µA
–60
–50
–40
–150µA
–30
–100µA
–20
0
40
60
80 100 120 140 160
–2
–10
–3
–1
Ta=75˚C
25˚C
– 0.1
–25˚C
– 0.03
–1
–3
–10
–30
–100
Collector current IC (mA)
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–1
–3
–10
–6
–8
–10
–40
–12
0
– 0.4
–30
–100
Collector to base voltage VCB (V)
– 0.8
–1.2
–1.6
–2.0
Base to emitter voltage VBE (V)
fT — IE
300
VCE=–5V
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
– 0.1 – 0.3
VCB=–10V
Ta=25˚C
250
200
150
100
50
0
–1
–3
–10
–30
Collector current IC (mA)
Cob — VCB
6
–4
600
Forward current transfer ratio hFE
–30
– 0.01
– 0.1 – 0.3
–60
hFE — IC
IC/IB=10
– 0.3
–80
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
–25˚C
0
0
Transition frequency fT (MHz)
20
Ta=75˚C
–20
–50µA
–10
0.1
Collector current IC (mA)
0.7
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
–100
0.8
0
Collector output capacitance Cob (pF)
VCE=–5V
Ta=25˚C
0.9
0
2
IC — VBE
–80
Collector current IC (mA)
Collector power dissipation PC (W)
1.0
–100
1
3
10
30
Emitter current IE (mA)
100
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2001 MAR