2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)180 (--)160 V (--)6 V Collector Current VEBO IC (--)1.5 A Collector Current (Pulse) ICP (--)2.5 A Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage 500 Mounted on a ceramic board (250mm2✕0.8mm) V mW 1.5 W 150 °C --55 to +150 °C Marking 2SA1419 : AE 2SC3649 : CE Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/5 2SA1419 / 2SC3649 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)120V, IE=0A (--)1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 μA hFE1 VCE=(--)5V, IC=(--)100mA hFE2 VCE=(--)5V, IC=(--)10mA Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)500mA, IB=(--)50mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO IC=(--)500mA, IB=(--)50mA IC=(--)10μA, IE=0A (--)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)160 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A Turn-ON Time ton See specified Test Circuit. (40)40 ns Storage Time tstg tf See specified Test Circuit. (0.7)1.2 μs See specified Test Circuit. (40)80 ns DC Current Gain Fall Time 100* 400* 80 120 MHz (22)14 pF (--200)130 (--500)450 (--)0.85 (--)1.2 (--)6 mV V V *: The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB RL VR 50Ω + 100μF + 470μF --5V 100V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) No.2007-2/5 2SA1419 / 2SC3649 IC -- VCE --1.8 2SC3649 --1.6 1.6 --0.6 A --80m A m 0 6 -A m --40 A --20m A m 0 --1 --5mA --0.4 --2mA --0.2 --1mA --1.2 --1.0 --0.8 1.2 --1 --2 --3 10mA 5m A 0.8 0.6 2mA 0.4 1mA 0.2 IB=0mA --4 0 --5 Collector-to-Emitter Voltage, VCE -- V 0 1 --0.6 --2.0mA --0.4 --1.5mA --1.0mA A 2SC3649 2.5mA 2.0mA 1.5mA 0.4 1.0mA 0.2 --0.5mA Collector Current, IC -- A 50 ITR03574 IC -- VBE 0.4 0 25°C --25°C 5 0.2 0.4 0.6 0.8 1.0 1.2 ITR03576 hFE -- IC 1000 2SC3649 VCE=5V 7 5 3 Ta=75°C 2 25°C 100 --25°C 7 5 3 3 2 2 --5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3 ITR03577 Collector Current, IC -- A 0 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE Ta=75°C °C 25°C --25°C 0.8 Ta= 75 5°C 25°C --25°C 2SA1419 VCE=--5V 5 10 40 1.2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03575 7 7 30 2SC3649 VCE=5V hFE -- IC 100 20 1.6 Ta= 7 Collector Current, IC -- A IC -- VBE 0 10 Collector-to-Emitter Voltage, VCE -- V 2SA1419 VCE=--5V --0.4 2 IB=0mA 0 ITR03573 --0.8 3 0 --50 --1.2 1000 DC Current Gain, hFE 0.5mA IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 0 5 ITR03572 3.0mA 0.6 --0.2 --1.6 4 4.0mA 3.5mA m 4.5 mA 0.8 Collector Current, IC -- A Collector Current, IC -- A A --5.0m --4.5mA --4.0mA --3.5mA --3.0mA --2.5mA 3 IC -- VCE 1.0 2SA1419 --0.8 2 Collector-to-Emitter Voltage, VCE -- V ITR03571 IC -- VCE --1.0 20mA 1.0 IB=0mA 0 0 50mA 40mA 30mA 1.4 5.0 --1.4 Collector Current, IC -- A Collector Current, IC -- A IC -- VCE 1.8 2SA1419 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03578 No.2007-3/5 2SA1419 / 2SC3649 f T -- IC 5 Cob -- VCB 100 2SA1419 / 2SC3649 7 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 2SA1419 / 2SC3649 2SC3649 2 2SA1419 100 7 5 3 2 5 2SA 3 141 2SC 364 9 10 7 5 For PNP, minus sign is omitted For PNP, minus sign is omitted 10 0.01 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 25°C --100 °C Ta=75 --25°C 3 7 2 --0.01 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 7 25°C 3 5 75°C 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 100 25°C 7 Ta=75°C 5 --25°C 7 0.01 2 3 5 7 0.1 2 3 DC 3 2 3 2 Ta=--25°C 1.0 7 5 25°C 7 0.01 2 3 5 7 0.1 75°C 2 3 n 3 2 For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 7 10 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR03584 PC -- Ta 2SA1419 / 2SC3649 tio 5 3 1.6 era 3 2 ITR03582 5 1.8 op 0.1 7 5 7 1.0 2SC3649 IC / IB=10 ITR03583 1 10 ms m s 10 0m s 1.0 7 5 5 VBE(sat) -- IC 2SA1419 / 2SC3649 IC=1.5A 2 2 3 3 ASO ICP=2.5A 7 1.0 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta=--25°C 5 5 7 --1.0 7 100 ITR03580 2SC3649 IC / IB=10 10 2 0.01 7 5 5 7 2 3 Collector Dissipation, PC -- W Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 5 Collector Current, IC -- A --1.0 5 3 2 3 VCE(sat) -- IC ITR03581 7 2 2 10 3 2SA1419 IC / IB=10 --0.01 7 1000 VBE(sat) -- IC --10 7 5 2 7 5 3 3 --1000 7 2 Collector-to-Base Voltage, VCB -- V 2SA1419 IC / IB=10 2 3 3 1.0 2 1.0 ITR03579 VCE(sat) -- IC 3 2 9 2 5 7 100 Collector-to-Emitter Voltage, VCE -- V M 1.4 1.2 ou nt ed on 1.0 ac er am 0.8 0.6 No h ic bo ar d( 25 eat s 0.4 ink 0m m2 ✕ 0.2 2 3 ITR03585 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 0.8 m m ) 140 160 ITR03586 No.2007-4/5 2SA1419 / 2SC3649 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2007-5/5