ONSEMI NTD95N02RT4G

NTD95N02R
Power MOSFET
95 Amps, 24 Volts
N−Channel DPAK
Features
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High Power and Current Handling Capability
Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Low Gate Charge to Minimize Switching Losses
Pb−Free Packages are Available
V(BR)DSS
RDS(ON) TYP
4.5 mW @ 10 V
24 V
5.9 mW @ 4.5 V
95 A
*ID MAX in the product summary table is continuous
and steady at 25°C.
Applications
D
CPU Motherboard Vcore Applications
High Frequency DC−DC Converters
Motor Drives
Bridge Circuits
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
VDSS
24
V
Gate−to−Source Voltage
VGS
±20
V
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ TA = 25°C
Drain Current –
− Continuous @ TA= 25°C, Limited by Package
− Continuous @ TA= 25°C, Limited by Wires
RqJC
PD
1.45
86
°C/W
W
ID
ID
95
32
A
A
Thermal Resistance, Junction−to− Ambient
(Note 1)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA= 25°C
RqJA
52
°C/W
PD
ID
2.4
15.8
W
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA= 25°C
RqJA
100
°C/W
PD
ID
1.25
12
W
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
IS
45
A
Single Pulse Drain−to−Source Avalanche
Energy – (VDD = 25 V, VG = 10, IPK = 13 A,
L = 1 mH, RG= 25 W)
EAS
84
mJ
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 seconds)
TL
Continuous Source Current (Body Diode)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
1 2
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
2
1
3
Drain
Gate
Source
4
Drain
4
1
DPAK
CASE 369D
(Straight Lead)
STYLE 2
2
3
°C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
YWW
T95
N02RG
•
•
•
•
ID MAX*
YWW
T95
N02RG
•
•
•
•
•
1 2 3
Gate Drain Source
Y
WW
T95N02R
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1
Publication Order Number:
NTD95N02R/D
NTD95N02R
THERMAL RESISTANCE RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.45
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
52
Junction−to−Ambient – Steady State (Note 4)
RqJA
100
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
24
29
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/T
15
mV/°C
OFF CHARACTERISTICS
J
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V
TJ = 25°C
TJ = 125°C
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage
1.5
mA
10
±100
nA
2.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
1.0
5.0
mV/°C
mW
VGS = 4.5 V, ID = 10 A
5.9
8.0
VGS = 10 V, ID = 20 A
4.5
5.0
VGS = 10 V, ID = 10 A
30
S
2400
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
390
QT
21
Total Gate Charge
QGS
VGS = 0 V, f = 1.0 MHz, VDS = 20 V
VGS = 4.5 V, VDS = 10 V; ID = 10 A
1020
nC
4.4
QGD
9.1
td(on)
10
SWITCHING CHARACTERISTICS
Turn−on Delay Time
Rise Time
Turn−off Time
tr
td(off)
Fall Time
VGS = 10 V, VDD = 10 V,
ID = 30 A, RG = 3 W
tf
ns
82
26
70
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
45
Charge Time
Ta
20
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, IS = 20 A
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 20 A
QRR
0.83
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2
V
ns
30
50
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
1.2
nC
NTD95N02R
TYPICAL CHARACTERISTICS
160
TJ = 25°C
4.2 V
4.0 V
140
120
3.6 V
100
3.4 V
80
3.2 V
60
3.0 V
40
2.8 V
2.6 V
2.4 V
20
0
2
1
3
4
5
6
8
7
9
10
120
100
80
TJ = 100°C
60
TJ = 25°C
40
TJ = −55°C
0
1
2
3
4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.006
0.005
0.004
4
5
6
7
8
9
10
6
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.007
0.016
TJ = 25°C
0.014
0.012
0.010
VGS = 4.5 V
0.008
0.006
0.004
VGS = 10 V
0.002
10
30
50
70
90
110
130
150
170
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
100000
ID = 95 A
VGS = 10 V
VGS = 0 V
IDSS, LEAKAGE (nA)
1.6
140
0
ID = 95 A
TJ = 25°C
3
160
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.008
0.003
180
20
0.009
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS w 10 V
200
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
220
VGS = 10 V
7.0 V
5.0 V
ID, DRAIN CURRENT (A)
200
180
TJ = 150°C
10000
1.4
1.2
1.0
1000
TJ = 100°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
2
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
4
6
8
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
NTD95N02R
4500
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
TJ = 25°C
CISS
4000
3500
3000
CISS
2500
CRSS
2000
1500
COSS
1000
CRSS
500
0
10
5
VGS
0
VDS
5
10
15
20
6
12
5
QT
4
VDS
QGS
3
8
VGS
QGD
2
4
1
0
ID = 10 A
TJ = 25°C
0
4
8
12
16
20
0
24
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
1000
100
VDS = 10 V
ID = 30 A
VGS = 10 V
IS, SOURCE CURRENT (A)
tr
tf
100
t, TIME (ns)
90
td(off)
10
td(on)
80
VGS = 0 V
TJ = 25°C
70
60
50
40
30
20
10
1
1
10
0
0.4
100
RG, GATE RESISTANCE (W)
0.6
0.8
1.0
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
ORDERING INFORMATION
Package
Shipping †
DPAK
75 Units / Rail
DPAK
(Pb−Free)
75 Units / Rail
DPAK
75 Units / Rail
DPAK
(Pb−Free)
75 Units / Rail
DPAK
2500 Units / Tape & Reel
DPAK
(Pb−Free)
2500 Units / Tape & Reel
Device
NTD95N02R
NTD95N02RG
NTD95N02R−001
NTD95N02R−001G
NTD95N02RT4
NTD95N02RT4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTD95N02R
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
Z
H
3
U
F
J
L
D 2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD95N02R
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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For additional information, please contact your local
Sales Representative
NTD95N02R/D