Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● ■ Absolute Maximum Ratings (TC=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –15 A Collector current IC –9 A dissipation 100 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 3 ■ Electrical Characteristics φ3.2±0.1 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 Parameter Collector power TC=25°C 21.0±0.5 15.0±0.2 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ● 15.0±0.3 11.0±0.2 0.7 ■ Features 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –150V, IE = 0 –50 µA Emitter cutoff current IEBO VEB = –3V, IC = 0 –50 µA hFE1 VCE = –5V, IC = –20mA 20 hFE2* VCE = –5V, IC = –1A 60 20 Forward current transfer ratio 200 hFE3 VCE = –5V, IC = –7A Base to emitter voltage VBE VCE = –5V, IC = –7A Collector to emitter saturation voltage VCE(sat) IC = –7A, IB = – 0.7A Transition frequency fT VCE = –5V, IC = – 0.5A, f = 1MHz 15 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 270 pF *h FE2 –1.8 –2.0 V V Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SB1361 PC — Ta IC — VCE 100 80 60 (1) 40 –12 TC=25˚C –10 20 –10 –200mA –8 –150mA –100mA –80mA –6 –60mA –4 –40mA –20mA –2 (2) (3) 20 40 60 80 100 120 140 160 –2 –8 –10 –3 TC=100˚C 25˚C –25˚C – 0.1 – 0.03 –3 –10 –10 –12 –30 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 – 0.1 – 0.3 –100 –1 –3 –10 –30 –100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C Collector current IC (A) –30 1000 300 Non repetitive pulse TC=25˚C ICP t=10ms –10 –3 IC 100ms –1 DC – 0.3 100 – 0.1 30 – 0.03 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 –1 –2 –3 Base to emitter voltage VBE (V) fT — IC VCE=–5V Collector current IC (A) 3000 0 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –6 IC/IB=10 10 –1 –4 hFE — IC –30 – 0.3 Collector output capacitance Cob (pF) –4 1000 –1 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.01 – 0.1 – 0.3 100˚C 0 0 Ambient temperature Ta (˚C) –1 –8 –2 0 0 25˚C TC=–25˚C –10mA 0 2 VCE=–5V IB=–300mA Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) IC — VBE –12 Collector current IC (A) Collector power dissipation PC (W) 120 –100 –300 –1000 Collector to emitter voltage VCE (V) VCE=–5V f=1MHz TC=25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Power Transistors 2SB1361 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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