ETC ON1128S

Transmissive Photosensors (Photo Interrupters)
CNZ1122, CNZ1128 (ON1122, ON1128)
Photo Interrupters
Unit : mm
CNZ1122
Mark for
indicating
LED side
25.0±0.35
13.0±0.3
3.0±0.2
Device
center
Overview
7.0 min.
2.5±0.2
10.0±0.2
CNZ1122 and CNZ1128 are a photocoupler in which a visible
light emitting diode is used as the light emitting element, and a high
sensitivity phototransistor is used as the light detecting element. The
two elements are arranged so as to face each other, and objects passing
between them are detected.
3.0±0.3
For contactless SW, object detection
2-0.45±0.2
*9.6±0.3
2-ø3.2±0.2
19.0±0.2
2
3
6.2±0.2
Features
Highly precise position detection : 1.2 mm
*2.54±0.2
Fast response : tr, tf = 6 µs (typ.)
Using small package for saving mounting space (CNZ1128)
Small output current variation against change in temperature
1
4
2
3
1
4
Pin connection
(Note) * is dimension at the root of leads
Absolute Maximum Ratings (Ta = 25˚C)
V
IF
25
mA
Mark for indicating
LED side
PD*1
70
mW
13.0±0.3
3.0±0.2
20
mA
Output (Photo Collector to emitter voltage VCEO
transistor)
Emitter to collector voltage VECO
30
V
5
V
Collector power dissipation
PC*2
100
mW
Operating ambient temperature
Topr –25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
Temperature
*1
*2
Unit : mm
CNZ1128
3
IC
Input power derating ratio is 0.93 mW/˚C at Ta ≥ 25˚C.
Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.
3.5±0.2
Device
center
3.0±0.3
Collector current
Unit
VR
;
;
;;;
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Symbol Ratings
7.0 min. 10.0±0.2
2.5±0.2
Reverse voltage (DC)
4- 0.45±0.2
*9.4±0.3
*2.54±0.2
2
3
1
4
6.2±0.2
Parameter
2
3
1
4
Pin connection
(Note) * is dimension at the root of leads
Note) The part numbers in the parenthesis show conventional part number.
1
Transmissive Photosensors (Photo Interrupters)
CNZ1122,CNZ1128
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Collector cutoff current
Output
characteristics Collector to emitter capacitance
Conditions
VF
IF = 20mA
IR
VR = 3V
ICEO
min
VCE = 10V, f = 1MHz
2.1
2.8
V
5
µA
200
nA
5
Collector current
IC
VCE = 10V, IF = 15mA
Transfer
Response time
tr , tf*1 VCC = 10V, IC = 1mA, RL = 100Ω
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 25mA, IC = 0.1mA
Unit
pF
0.3
mA
µs
6
0.5
V
Switching time measurement circuit
Sig.IN
VCC
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
(Input pulse)
Sig.OUT (Output pulse)
*2
RL
90%
10%
td
;;
;;
50Ω
tr
tf
IC classifications
Class
Q
R
S
IC (mA)
0.3 to 0.75
0.55 to 1.30
>1.10
IF , IC — Ta
IF — V F
IC — I F
10 2
32
VCE = 10V
Ta = 25˚C
IF
20
IC
10
0
– 25
0
20
40
60
80
Ambient temperature Ta (˚C )
100
IC (mA)
30
24
Collector current
IF (mA)
Ta = 25˚C
Forward current
Forward current, collector current
IF , IC (mA)
40
2
max
VCE = 10V
CC
*2
*1
typ
16
8
0
0
0.4
0.8
1.2
1.6
2.0
Forward voltage VF (V)
2.4
10
1
10 –1
10 –2
10 –1
1
10
Forward current IF (mA)
10 2
CNZ1122,CNZ1128
Transmissive Photosensors (Photo Interrupters)
IC — VCE
IC — Ta
10 2
1
10 –1
10 –2
10 –1
1
80
40
0
– 40 – 20
10 2
10
120
Collector to emitter voltage VCE (V)
0
20
;
10 –1
10 –2
10 –1
tr
td
90%
10%
IC (%)
100Ω
80
Relative output current
tr (µs)
500Ω
10
V1
50Ω
10 –2
10 –3
– 40 – 20
0
20
40
60
80 100 120
Ambient temperature Ta (˚C )
VCE = 10V
Ta = 25˚C
IF = 15mA
RL = 1kΩ
Sig. V1
OUT
V2 V2
RL
100
10 –1
IC — d
10 2
VCC
80
1
VCE = 10V
100
VCC = 10V
Ta = 25˚C
Sig.IN
60
Ambient temperature Ta (˚C )
tr — IC
10 3
1
40
ICEO (µA)
IC (%)
Relative output current
IC (mA)
Collector current
10
Dark current
VCE = 10V
IF = 15mA
IF = 20mA
Ta = 25˚C
Rise time
ICEO — Ta
10
160
60
Criterion
0
d
40
20
tf
1
Collector current IC (mA)
10
0
0
1
2
3
4
5
6
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission from our
company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always
the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or
distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR