2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) 1 3 2 Rating Unit VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V DC IC 3.0 Pulse ICP 5.0 IB 0.3 Collector current Base current Collector power dissipation (t=10s) Total collector power dissipation (DC) Junction temperature Storage temperature range PC (Note.1) 1.00 0.625 1.Base 2.Emitter 3.Collector 0.15 0～0.1 Collector-base voltage Symbol 0.7±0.05 Maximum Ratings (Ta = 25°C) Characteristics A JEDEC ― A JEITA ― TOSHIBA 0.4±0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 0.95 0.95 • 2.9±0.2 1.9±0.2 +0.2 2.8-0.3 +0.2 1.6-0.1 0.16±0.05 Strobe Flash Applications 2－3S1A W Tj 150 °C Tstg −55 to 150 °C 2 Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 2004-07-01 2SC5976 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition VCB = 50 V, IE = 0 Min Typ. Max Unit ⎯ ⎯ 0.1 μA Collector cut-off current ICBO Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 0.1 μA V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 250 ⎯ 400 hFE (2) VCE = 2 V, IC = 1.0 A 120 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1.0 A, IB =33mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1.0 A, IB =33mA ⎯ ⎯ 1.10 V Collector-emitter breakdown voltage DC current gain Collector output capacitance Switching time VCB = 10 V, IE = 0, f=1MHz Cob Rise time tr Storage time tstg Fall time tf 18 pF See Figure 1. ⎯ 40 ⎯ VCC ≈ 12V, RL = 12 Ω ⎯ 320 ⎯ IB1 = −IB2 = 33 mA ⎯ 25 ⎯ ns VCC IB1 Input IB1 RL 20 µs Output IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart MARKING Part No. (or abbreviation code) W Lot code (year) Dot: even year No dot: odd year W Lot code (month) 2 2004-07-01 2SC5976 IC – VCE 3.0 hFE – IC 1000 20 15 Ta = 100°C 8 DC current gain hFE Collector current IC (A) 10 2.5 2.0 6 1.5 4 1.0 IB = 2 mA 0.5 0.4 1.2 0.8 1.6 2.0 Collector−emitter voltage VCE −55°C 100 Common emitter Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 25°C VCE = 2 V Single nonrepetitive pulse 10 0.01 0.001 2.4 Base-emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 0.1 −55°C Ta = 100°C 25°C 0.01 0.1 1 Collector current IC Ta = −55°C 1 100°C 25°C 0.1 0.001 10 0.01 (A) 0.1 (W) PC Collector power dissipation (A) Collector current IC 2.0 1.5 Ta = 100°C −55°C 1.0 0.5 25°C 0.4 0.6 (A) Pc – Ta 0.8 VCE = 2 V 2.5 Single nonrepetitive pulse 0.2 10 1 Collector current IC Common emitter 0 0 (A) Common emitter β = 30 Single nonrepetitive pulse IC – VBE 3.0 10 VBE (sat) – IC 10 Common emitter β = 30 Single nonrepetitive pulse 0.01 0.001 1 Collector current IC (V) VCE (sat) – IC 1 0.1 0.8 1.0 Base−emitter saturation voltage VBE DC Operation Ta = 25°C Mounted on an FR4 board glass epoxy, 2 1.6 mm thick, Cu area: 645 mm ) 0.6 0.4 0.2 0 0 1.2 (V) 20 40 60 80 100 Ambient temperature 3 Ta 120 140 160 (°C) 2004-07-01 2SC5976 rth – tw Transient thermal resistance rth(j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C 2 Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 10 10 ms* 1 ms* 100 µs* 1 10 µs* 10 s* DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max Collector current IC (A) IC max (Pulsed)* IC max (Continuous)* 100 ms* 10 Collector−emitter voltage VCE 100 (V) 4 2004-07-01 2SC5976 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-01