isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983 APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 1.5 A IBM Base Current-Peak 4 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1345 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.2 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 2V 70 hFE-2 DC Current Gain IC= 5A; VCE= 2V 30 Current-Gain—Bandwidth Product IC= 1A; VCE= 5V fT CONDITIONS B MIN TYP. MAX 50 UNIT V B B B 200 10 MHz 0.2 μs 0.9 μs 0.3 μs Switching times ton Turn-on Time tstg Storage Time tf RL= 10Ω, VBB2= -5V IC= 2A; IB1= -IB2= 0.2A Fall Time isc Website：www.iscsemi.cn 2