DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES • Automatic mounting supported • Gate can be driven by a 1.5 V power source • Because of its high input impedance, there’s no need to consider a drive current • Since bias resistance can be omitted, the number of components required can be reduced 0.8 ± 0.1 1.6 ± 0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 3 0 to 0.1 2 1 0.2 +0.1 –0 0.5 0.6 0.5 0.75 ± 0.05 1.0 1.6 ± 0.1 1: Source 2: Gate 3: Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SK3503 SC-75 (USM) Marking: E1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 16 V Gate to Source Voltage (VDS = 0 V) VGSS ±7.0 V Drain Current (DC) (Tc = 25°C) ID(DC) ±0.1 A Drain Current (pulse) Note1 ID(pulse) ±0.4 A Total Power Dissipation (TC = 25°C) Note2 PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15395EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2001 2SK3503 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V ±3.0 µA VGS(off) VDS = 3.0 V, ID = 10 µA 0.5 1.1 V | yfs | VDS = 3.0 V, ID = 10 mA 20 RDS(on)1 VGS = 1.5 V, ID = 1.0 mA 20 50 Ω RDS(on)2 VGS = 2.5 V, ID = 10 mA 7.0 15 Ω RDS(on)3 VGS = 4.0 V, ID = 10 mA 5.0 12 Ω Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 0.8 mS Input Capacitance Ciss VGS = 0 V 10 pF Output Capacitance Coss VDS = 3.0 V 13 pF Reverse Transfer Capacitance Crss f = 1 MHz 3.0 pF Turn-on Delay Time td(on) VDD = 3.0 V, ID = 10 mA 15 ns tr VGS = 3.0 V 70 ns td(off) RG = 10 Ω 100 ns 110 ns Rise Time Turn-off Delay Time Fall Time tf Note Pulsed TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% 2 VGS 10% td(on) tr ton td(off) tf toff Data Sheet D15395EJ2V0DS 2SK3503 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 Pulsed 2.0 V Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm 200 40 ID - Drain Current - mA PT - Total Power Dissipation - mW 240 160 120 80 1.8 V 30 20 1.6 V 10 1.4 V 40 VGS = 1.2 V 30 60 90 120 150 180 TA - Ambient Temperature - ˚C 210 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS 500 VDS = 3.0 V Pulsed 200 TA = –25˚C 25˚C 75˚C 100 50 20 10 5 10 20 50 100 ID - Drain Current - mA 200 0 RDS(on) - Drain to Source On-state Resistance - Ω 0 2 3 4 1 VDS - Drain to Source Voltage - V 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = –25˚C Pulsed 100 50 VGS = 1.5 V 20 10 2.5 V 5 4.0 V 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 25˚C Pulsed 100 50 20 VGS = 1.5 V 10 2.5 V 4.0 V 5 0.5 1 2 5 10 20 50 100 200 500 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω TA = 75˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75˚C Pulsed 100 50 20 VGS = 1.5 V 10 2.5 V 4.0 V 5 0.5 ID - Drain Current - mA 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA Data Sheet D15395EJ2V0DS 3 30 TA = – 25˚C Pulsed ID = 10 mA 20 1 mA 10 0 2 3 4 5 6 1 VGS - Gate to Source Voltage - V 7 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 25˚C Pulsed ID = 10 mA 20 1 mA 10 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 20 200 TA = 75˚C Pulsed ID = 10 mA 1 mA 10 VGS = 0 V Pulsed 100 50 20 10 5 2 1 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 0 7 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF 20 Ciss Coss 5 2 1 0.5 1.0 500 VGS = 0 V f = 1 MHz 10 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 50 4 7 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - mA RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 2SK3503 Crss 1 2 5 10 20 VDS - Drain to Source Voltage - V 50 VDD = 3.0 V VGS = 3.0 V RG = 10 Ω tr 200 100 tf 50 td(on) 20 10 Data Sheet D15395EJ2V0DS td(off) 20 50 100 200 ID - Drain Current - mA 500 2SK3503 • The information in this document is current as of November, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1