PIN Photodiodes PNZ330CL (PN330CL) PIN Photodiode Unit : mm ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 For optical fiber communication systems Features 12.7 min. 2.0±0.1 0.2±0.05 TO-18 standard type package High coupling capability suitable for plastic fiber High quantum efficiency 2-ø0.45±0.05 High-speed response 1. 0± 0. 15 5 .1 +0 0.1 0– 1. 3˚ 45± 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter 2.54±0.2 Symbol Ratings Unit Reverse voltage (DC) VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Anode 2: Cathode Dimensions of detection area Unit : mm 1.0 0.86 Active region A1 ø0.1 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ID VR = 10V Photo current IL VR = 10V, L = 1000 lx*1 λP VR = 10V Peak sensitivity wavelength *2 min 7 typ max 0.1 10 Unit nA 10 µA 850 nm 2 ns tr, tf*2 VR = 10V, RL = 50Ω Capacitance between pins Ct VR = 10V, f = 1MHz 7 pF Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. Response time *1 Conditions Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ;;;; ;;;; (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) Note) The part number in the parenthesis shows conventional part number. 1 PIN Photodiodes PNZ330CL 16 16 VR = 10V Ta = 25˚C 10 3 IL — Ta IL — V R IL — L 14 1 IL (µA) 10 12 L = 1000 lx 10 Photo current IL (µA) 10 2 Photo current IL (µA) Photo current VR = 10V L = 1000 lx Ta = 25˚C 14 8 6 L = 500 lx 4 12 10 8 6 4 10 –1 2 2 10 –2 1 10 2 10 10 3 0 10 4 0 10 20 30 40 0 – 60 – 40 – 20 50 ID — Ta tr , tf — RL 10 2 100 tr , tf (ns) 10 2 10 –2 0 20 40 60 80 10 1 10 –1 10 –2 100 Ambient temperature Ta (˚C ) 10˚ 20 10 –1 1 40 60˚ 70˚ 80˚ 400 600 800 1000 Coupling loss characteristics 0 Z = 0mm 1 2 3 Fiber Y 4 0 0.4 0.8 1.2 Distance Z (mm) 1 Z = 0.3mm 2 3 X 1.6 Fiber Y 4 Z ø1mm X 5 1200 Wavelength λ (nm) X,Y = 0mm 50˚ 90˚ 2 60 0 200 10 0 Coupling loss LZ (dB) 40 Relative sensitivity S (%) 60 80 100 80 Coupling loss characteristics 30˚ 40˚ 100 80 20˚ 60 VR = 10V Ta = 25˚C External load resistance RL (kΩ) Directivity characteristics 0˚ 40 20 Coupling loss LX , LY (dB) 10 –3 – 40 – 20 Relative sensitivity 1 Rise time, Fall time ID (nA) Dark current S (%) VR = 10V 10 –1 20 Spectral sensitivity characteristics 10 3 10 0 Ambient temperature Ta (˚C ) Reverse voltage VR (V) Illuminance L (lx) 5 – 0.8 – 0.4 0 Z ø1mm 0.4 Distance X, Y (mm) 0.8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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