PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description • • The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. • • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 120 60 100 50 80 40 VDD = 28.0 V IDQ = 1.0 A f = 894 MHz 60 40 30 20 20 Efficiency (%) Output Power (Watts) Efficiency 1013 3 A-12 3456 9947 10 Output Pow er 0 0 0 1 2 3 4 5 6 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 12.5 13.5 — dB P-1dB 85 90 — Watts h 45 50 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10133 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 205 Watts 1.18 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.85 °C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain 16 15 14 13 12 11 100 90 Gain 80 VDD = 28 V IDQ = 1.0 A Efficiency 70 60 50 10 40 860 865 870 875 880 885 890 895 900 50 16 40 Gain (dB) 12 30 VDD = 28 V IDQ = 1.0 A 8 20 0 POUT = 85 W Return Loss (dB) -10 10 4 0 -20 860 865 870 875 880 885 890 895 900 Frequency (MHz) Frequency (MHz) 2 Efficiency 110 Output Pow er (W) Return Loss 17 60 Efficiency (%) Gain (dB) 120 Output Power & Efficiency 18 Broadband Test Fixture Performance 20 e PTF 10133 Output Power vs. Supply Voltage Capacitance vs. Supply Voltage * 300 48 250 90 80 70 60 IDQ = 1.0 A f = 894 MHz 50 Cgs 40 200 32 150 24 Cds 100 16 Crss 50 40 8 0 24 26 28 30 32 34 36 0 0 10 Intermodulation Distortion vs. Output Power 30 40 Power Gain vs. Output Power 16 (as measured in a broadband circuit) -10 IDQ = 1.0 VDD = 28 V, IDQ =1A f1 = 894 MHz, f2 = 894.1 MHz 15 Power Gain (dB) -20 20 Supply Voltage (Volts) Supply Voltage (Volts) 3rd Order -30 -40 5th -50 7th -60 -70 14 IDQ = 500 13 12 VDD = 28 V f = 894 MHz IDQ = 250 11 0 20 40 60 80 100 0.1 Output Power (Watts-PEP) 10.0 Output Power (Watts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) IMD (dBc) VGS = 0 V f = 1 MHz Crss (pF) 100 Cds & Cgs (pF) Output Power (Watts) 110 1.01 1.00 0.86 0.99 2.5 0.98 4.16 0.97 5.8 7.42 0.96 9.06 0.95 -20 30 80 Temp. (°C) 3 130 1000.0 e PTF 10133 Z Source Z Load Z0 = 50 W 0.1 D (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A) W AR D GE Impedance Data G Z Load S jX R jX 3.2 -3.2 1.3 1.2 870 3.6 -3.2 1.3 1.1 880 4.1 -3.2 1.3 0.9 890 4.7 -3.1 1.3 0.8 900 5.3 -2.9 1.2 0.8 925 7.0 -2.0 1.2 0.7 942 8.1 -0.6 1.2 0.7 960 7.7 1.1 1.2 0.6 0.1 960 MHz 860 MHz S NG TH VEL E R 860 Z Source 0 .1 WA <--- MHz 960 MHz 0.2 860 MHz 0 .0 Z Load W DTOW ARD LOA Z Source W Frequency 0 .2 Typical Scattering Parameters (VDS = 28 V, ID = 2 A per side) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.980 0.982 0.983 0.989 0.989 0.987 0.983 0.982 0.980 0.972 0.958 0.929 0.858 0.693 0.783 0.918 0.951 0.974 0.988 0.984 0.979 0.980 0.992 0.991 0.986 -178 -179 -180 179 179 179 178 177 176 175 174 171 168 173 -170 -172 -175 -177 -178 -179 -180 180 180 179 178 0.996 0.773 0.641 0.545 0.489 0.449 0.425 0.414 0.405 0.419 0.442 0.509 0.662 0.882 0.714 0.423 0.261 0.184 0.124 0.060 0.048 0.070 0.058 0.049 0.042 15.6 12.8 9.48 7.19 5.48 2.11 -0.90 -4.52 -10.2 -14.3 -19.9 -27.5 -42.4 -75.9 -125 -153 -167 -179 165 158 -154 179 166 156 149 0.010 0.008 0.006 0.005 0.003 0.002 0.002 0.001 0.001 0.001 0.001 0.005 0.013 0.030 0.028 0.022 0.020 0.019 0.018 0.017 0.018 0.018 0.018 0.019 0.021 -85.2 -85.3 -85.7 -85.3 -93.7 -74.5 -64.9 -68.5 -55.1 -88.5 -87.2 -105 -133 174 120 101 89.2 81.8 77.9 76.7 77.4 73.9 74.5 78.7 79.7 0.994 0.993 0.992 0.996 0.999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 0.983 0.990 0.992 0.984 -177 -177 -178 -179 -179 -179 -179 -180 -180 180 180 179 179 179 179 179 179 178 178 178 178 178 177 178 178 4 S22 e PTF 10133 Test Circuit Test Circuit Schematic for f = 894 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 PTF 10133 0.040 l 894 GHz 0.096 l 894 GHz 0.098 l 894 GHz 0.073 l 894 GHz 0.107 l 894 GHz 0.110 l 894 GHz 0.250 l 894 GHz 0.081 l 894 GHz 0.178 l 894 GHz 0.040 l 894 GHz LDMOS Field Effect Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.29 W Microstrip 9.29 W Microstrip 6.98 W Microstrip 77.9 W Microstrip 6.98 W Microstrip 50 W Microstrip 50 W C1, C3, C5, C10 C2 C4 C6 C7 C8 C9 R1, R2, R3 Circuit Board Circuit Board Components Layout (not to scale) 5 Capacitor, 36 pF ATC 100 B Capacitor, 4.3 pF ATC 100 B Capacitor, 6.2 pF ATC 100 B Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND Capacitor, 2.0 pF ATC 100 B Capacitor, 0.6-6 pF ATC 100 B Resistor, 220 W Digi-Key 1KQBK er = 4.0, .028 Dielectric Thickness, 1 Oz. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10133 Artwork (1 inch ) Package Mechanical Specifications Package 20248 Unless otherwise specified all tolerance ±0.005” Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Pins: 1.Drain 2.Source 3.Gate Lead Thickness: 0.004 +0.002/-0.001” 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10133 Uen Rev. A 12-01-99